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{"id":"https://openalex.org/W2072789172","doi":"https://doi.org/10.1016/j.microrel.2003.09.005","title":"Influence of mobility model on extraction of stress dependent source\u2013drain series resistance","display_name":"Influence of mobility model on extraction of stress dependent source\u2013drain series resistance","publication_year":2003,"publication_date":"2003-12-05","ids":{"openalex":"https://openalex.org/W2072789172","doi":"https://doi.org/10.1016/j.microrel.2003.09.005","mag":"2072789172"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2003.09.005","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091307828","display_name":"M.M. De Souza","orcid":"https://orcid.org/0000-0002-7804-7154"},"institutions":[{"id":"https://openalex.org/I66943878","display_name":"De Montfort University","ror":"https://ror.org/0312pnr83","country_code":"GB","type":"education","lineage":["https://openalex.org/I66943878"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"M.M. De Souza","raw_affiliation_strings":["Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK"],"affiliations":[{"raw_affiliation_string":"Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK","institution_ids":["https://openalex.org/I66943878"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059645325","display_name":"S. K. Manhas","orcid":"https://orcid.org/0000-0003-3360-9683"},"institutions":[{"id":"https://openalex.org/I66943878","display_name":"De Montfort University","ror":"https://ror.org/0312pnr83","country_code":"GB","type":"education","lineage":["https://openalex.org/I66943878"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"S.K. Manhas","raw_affiliation_strings":["Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK"],"affiliations":[{"raw_affiliation_string":"Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK","institution_ids":["https://openalex.org/I66943878"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101606631","display_name":"D. Chandra Sekhar","orcid":"https://orcid.org/0000-0003-4222-8946"},"institutions":[{"id":"https://openalex.org/I66943878","display_name":"De Montfort University","ror":"https://ror.org/0312pnr83","country_code":"GB","type":"education","lineage":["https://openalex.org/I66943878"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"D. Chandra Sekhar","raw_affiliation_strings":["Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK"],"affiliations":[{"raw_affiliation_string":"Emerging Technologies Research Centre, De Montfort University, Gateway Street, Leicester LE1 9BH, UK","institution_ids":["https://openalex.org/I66943878"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077991240","display_name":"A. S. Oates","orcid":"https://orcid.org/0000-0002-2567-2474"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"A.S. Oates","raw_affiliation_strings":["TSMC, 121 Park Ave 3, Science Based Industrial Park, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"TSMC, 121 Park Ave 3, Science Based Industrial Park, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000865541","display_name":"P. Chaparala","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Chaparala","raw_affiliation_strings":["Advanced Process Technology Development, National Semiconductor Corp., 2900 Semiconductor Dr., M/S E-155, Santa Clara, CA 95051, USA"],"affiliations":[{"raw_affiliation_string":"Advanced Process Technology Development, National Semiconductor Corp., 2900 Semiconductor Dr., M/S E-155, Santa Clara, CA 95051, USA","institution_ids":["https://openalex.org/I74760111"]}]}],"institution_assertions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2190,"currency":"USD","value_usd":2190,"provenance":"doaj"},"apc_paid":null,"fwci":0.296,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":3,"citation_normalized_percentile":{"value":0.594784,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":70,"max":72},"biblio":{"volume":"44","issue":"1","first_page":"25","last_page":"32"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.7424595},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation","score":0.5796909}],"concepts":[{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.7424595},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.63569987},{"id":"https://openalex.org/C143724316","wikidata":"https://www.wikidata.org/wiki/Q312468","display_name":"Series (stratigraphy)","level":2,"score":0.63280815},{"id":"https://openalex.org/C4725764","wikidata":"https://www.wikidata.org/wiki/Q844704","display_name":"Extraction (chemistry)","level":2,"score":0.5919976},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5796909},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47543406},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4714464},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.46206602},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.42981404},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4246429},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3994792},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24412343},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21652815},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15477708},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14830565},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.08600837},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.07802153},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2003.09.005","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[],"grants":[],"datasets":[],"versions":[],"referenced_works_count":23,"referenced_works":["https://openalex.org/W1661368752","https://openalex.org/W1973827356","https://openalex.org/W1995453839","https://openalex.org/W2000673128","https://openalex.org/W2007390612","https://openalex.org/W2021788585","https://openalex.org/W2026201816","https://openalex.org/W2059157314","https://openalex.org/W2071853817","https://openalex.org/W2073513858","https://openalex.org/W2074220705","https://openalex.org/W2096768978","https://openalex.org/W2098445301","https://openalex.org/W2105040935","https://openalex.org/W2123545669","https://openalex.org/W2140941636","https://openalex.org/W2144545104","https://openalex.org/W2144765907","https://openalex.org/W2147000230","https://openalex.org/W2147631772","https://openalex.org/W2160174313","https://openalex.org/W2164991272","https://openalex.org/W4237097236"],"related_works":["https://openalex.org/W3004580327","https://openalex.org/W2904579659","https://openalex.org/W2903616605","https://openalex.org/W2534928293","https://openalex.org/W2154138270","https://openalex.org/W2150099345","https://openalex.org/W2065117462","https://openalex.org/W2018358512","https://openalex.org/W1973827356","https://openalex.org/W1919101720"],"abstract_inverted_index":null,"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2072789172","counts_by_year":[{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2024-12-13T13:29:50.960192","created_date":"2016-06-24"}