乐胖代购免代理版

{"id":"https://openalex.org/W4383704275","doi":"https://doi.org/10.1016/j.mejo.2023.105895","title":"Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design","display_name":"Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design","publication_year":2023,"publication_date":"2023-07-10","ids":{"openalex":"https://openalex.org/W4383704275","doi":"https://doi.org/10.1016/j.mejo.2023.105895"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2023.105895","pdf_url":null,"source":{"id":"https://openalex.org/S4394736632","display_name":"Microelectronics Journal","issn_l":"0026-2692","issn":["0026-2692"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"journal-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038129779","display_name":"Bo Yi","orcid":"https://orcid.org/0000-0002-6596-8480"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Bo Yi","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064231752","display_name":"Yi Xu","orcid":"https://orcid.org/0000-0003-4606-7326"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Xu","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101222089","display_name":"LiTian Zheng","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"LiTian Zheng","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044693191","display_name":"Junji Cheng","orcid":"https://orcid.org/0000-0002-6163-6219"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"JunJi Cheng","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008498806","display_name":"Haimeng Huang","orcid":"https://orcid.org/0000-0002-3000-741X"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"HaiMeng Huang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080165930","display_name":"Moufu Kong","orcid":"https://orcid.org/0000-0003-2964-7652"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"MouFu Kong","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103437192","display_name":"Hongqiang Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"HongQiang Yang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I150229711"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5038129779"],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":null,"apc_paid":null,"fwci":0.162,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.38601,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":68,"max":79},"biblio":{"volume":"139","issue":null,"first_page":"105895","last_page":"105895"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9999,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9483553},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.72073984},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6506741},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.64043474},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5123464},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.44494843},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.42377633},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.39039096},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33618933},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29842108},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1262638}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2023.105895","pdf_url":null,"source":{"id":"https://openalex.org/S4394736632","display_name":"Microelectronics Journal","issn_l":"0026-2692","issn":["0026-2692"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.52,"display_name":"Affordable and clean energy"}],"grants":[{"funder":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China","award_id":"61804021"}],"datasets":[],"versions":[],"referenced_works_count":38,"referenced_works":["https://openalex.org/W1883168124","https://openalex.org/W1989210356","https://openalex.org/W1993829957","https://openalex.org/W2000095744","https://openalex.org/W2009042116","https://openalex.org/W2029699094","https://openalex.org/W2048339792","https://openalex.org/W2058483437","https://openalex.org/W2088498215","https://openalex.org/W2114001304","https://openalex.org/W2139228516","https://openalex.org/W2159280428","https://openalex.org/W2300510342","https://openalex.org/W2334227096","https://openalex.org/W2490765418","https://openalex.org/W2578252526","https://openalex.org/W2591487545","https://openalex.org/W2640641278","https://openalex.org/W2803983067","https://openalex.org/W2845356889","https://openalex.org/W2884700596","https://openalex.org/W2912852913","https://openalex.org/W2918902239","https://openalex.org/W2972226158","https://openalex.org/W3010793760","https://openalex.org/W3015001611","https://openalex.org/W3021468888","https://openalex.org/W3099063937","https://openalex.org/W3103000680","https://openalex.org/W3136648813","https://openalex.org/W3169793012","https://openalex.org/W4206320391","https://openalex.org/W4220892771","https://openalex.org/W4233975096","https://openalex.org/W4285605754","https://openalex.org/W4316661144","https://openalex.org/W4362714719","https://openalex.org/W4378675527"],"related_works":["https://openalex.org/W4296591199","https://openalex.org/W3119688974","https://openalex.org/W2946075430","https://openalex.org/W2912276428","https://openalex.org/W2909211499","https://openalex.org/W2762653771","https://openalex.org/W2588941787","https://openalex.org/W2060067973","https://openalex.org/W1983904762","https://openalex.org/W1967469573"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"proposed":[4,105,141],"a":[5,98,127,157],"novel":[6],"recess-free":[7],"insulated-gate":[8],"High":[9],"Electron":[10],"Mobility":[11],"Transistor":[12],"(HEMT)":[13],"with":[14,69,110,130,154,160],"p-SnO2":[15,25,45,111],"gate":[16,30,59],"realizing":[17,65],"high":[18,40,66,79],"threshold":[19],"voltage":[20],"(VTH)":[21],"over":[22,73],"2":[23],"V.":[24,166],"is":[26,85,120,143,149],"used":[27],"as":[28],"the":[29,39,44,54,58,104,131,135,140,161],"material":[31],"instead":[32],"of":[33,43,103,126,139,156,164],"traditional":[34],"Ni/Au":[35],"gate.":[36],"Owing":[37],"to":[38],"work":[41],"function":[42],"(both":[46],"wide":[47],"bandgap":[48],"and":[49,87],"large":[50],"electron":[51],"affinity":[52],"(\u03c7)),":[53],"2DEG":[55],"channel":[56,80],"under":[57],"region":[60],"can":[61],"be":[62],"deeply":[63],"depleted":[64],"VTH":[67,102,163],"even":[68],"thick":[70],"AlGaN":[71],"barrier":[72],"10":[74],"nm,":[75],"which":[76,119,148],"also":[77],"ensures":[78],"mobility.":[81],"An":[82],"analytical":[83],"model":[84],"presented":[86],"verified":[88],"by":[89,151],"experimentally":[90],"calibrated":[91],"TCAD":[92],"simulation.":[93],"Results":[94],"show":[95],"that":[96,125,155],"for":[97],"25":[99],"nm":[100],"Al2O3,":[101],"HEMT":[106,142],"reaches":[107],"3.1":[108],"V":[109,122],"doping":[112],"NA":[113],"=":[114],"5":[115],"\u00d7":[116],"1019":[117],"cm\u22123,":[118],"\u223c2.5":[121],"higher":[123],"than":[124],"conventional":[128],"MIS-HEMT":[129,159],"same":[132,162],"parameters.":[133],"Moreover,":[134],"specific":[136],"on-resistance":[137],"(Ron,sp)":[138],"only":[144],"1.31":[145],"m\u03a9":[146],"cm2,":[147],"reduced":[150],"54.8%":[152],"compared":[153],"recessed-gate":[158],"\u223c2.2":[165]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W4383704275","counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2024-12-11T05:09:12.082540","created_date":"2023-07-10"}