{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,3]],"date-time":"2024-09-03T16:50:04Z","timestamp":1725382204303},"reference-count":21,"publisher":"MDPI AG","issue":"19","license":[{"start":{"date-parts":[[2019,9,26]],"date-time":"2019-09-26T00:00:00Z","timestamp":1569456000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100013148","name":"Science and Technology Foundation of State Grid Corporation of China","doi-asserted-by":"publisher","award":["NYB17201800314"],"id":[{"id":"10.13039\/501100013148","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"With the development of China\u2019s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.<\/jats:p>","DOI":"10.3390\/s19194176","type":"journal-article","created":{"date-parts":[[2019,9,27]],"date-time":"2019-09-27T07:03:15Z","timestamp":1569567795000},"page":"4176","source":"Crossref","is-referenced-by-count":20,"title":["Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices"],"prefix":"10.3390","volume":"19","author":[{"given":"Chaoqun","family":"Jiao","sequence":"first","affiliation":[{"name":"School of Electrical Engineering, Beijing Jiaotong University, No.3 ShangYuanCun, Haidian District, Beijing 100044, China"}]},{"given":"Juan","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering, Beijing Jiaotong University, No.3 ShangYuanCun, Haidian District, Beijing 100044, China"}]},{"given":"Zhibin","family":"Zhao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, No.2, Beinong Road, Changping District, Beijing 102206, China"}]},{"given":"Zuoming","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering, Beijing Jiaotong University, No.3 ShangYuanCun, Haidian District, Beijing 100044, China"}]},{"given":"Yuanliang","family":"Fan","sequence":"additional","affiliation":[{"name":"Fujian Provincial Enterprise Key Laboratory of High Reliable Electric Power Distribution Technology, State Grid Fujian Electric Power Research Institute, No. 48 Fuyuan Branch, Cangshan District, Fuzhou 350007, China"}]}],"member":"1968","published-online":{"date-parts":[[2019,9,26]]},"reference":[{"key":"ref_1","unstructured":"Shigekane, H., Kirihata, H., and Uchida, Y. (1993, January 18\u201320). Developments in modern high power semiconductor devices. Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, Monterey, CA, USA."},{"key":"ref_2","unstructured":"Chokhawala, R., Danielsson, B., and Angquist, L. (2001, January 7). Power semiconductors in transmission and distribution applications. Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD \u201901 (IEEE Cat. No.01CH37216), Osaka, Japan."},{"key":"ref_3","unstructured":"Volke, A., Wendt, J., and Hornkamp, M. (2012). IGBT Modules: Technologies, Driver and Application, Infineon."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"M\u00fcsing, A., Ortiz, G., and Kolar, J.W. (2010, January 21\u201324). Optimization of the current distribution in press-pack high power IGBT modules. 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Soc."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/19\/4176\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,6,20]],"date-time":"2024-06-20T21:58:40Z","timestamp":1718920720000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/19\/4176"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9,26]]},"references-count":21,"journal-issue":{"issue":"19","published-online":{"date-parts":[[2019,10]]}},"alternative-id":["s19194176"],"URL":"https:\/\/doi.org\/10.3390\/s19194176","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,9,26]]}}}