{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,24]],"date-time":"2025-03-24T07:37:30Z","timestamp":1742801850167,"version":"3.37.3"},"reference-count":75,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2015,8,10]],"date-time":"2015-08-10T00:00:00Z","timestamp":1439164800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Ministry of Science and Technology in China","award":["2015DFE12880"]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["Grant No. 61471015"],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB\/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.<\/jats:p>","DOI":"10.3390\/mi6081023","type":"journal-article","created":{"date-parts":[[2015,8,10]],"date-time":"2015-08-10T15:15:00Z","timestamp":1439219700000},"page":"1023-1045","source":"Crossref","is-referenced-by-count":46,"title":["Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges"],"prefix":"10.3390","volume":"6","author":[{"given":"Mengxing","family":"Wang","sequence":"first","affiliation":[{"name":"Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, China"}]},{"given":"Yue","family":"Zhang","sequence":"additional","affiliation":[{"name":"Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, China"}]},{"given":"Xiaoxuan","family":"Zhao","sequence":"additional","affiliation":[{"name":"Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, China"}]},{"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[{"name":"Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, China"},{"name":"Institute of Fundamental Electronics (IEF), University of Paris-Sud, Orsay 91405, France"}]}],"member":"1968","published-online":{"date-parts":[[2015,8,10]]},"reference":[{"unstructured":"International Technology Roadmap for Semiconductor (ITRS), 2010 Update. Available online: http:\/\/www.itrs.net.","key":"ref_1"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"813","DOI":"10.1038\/nmat2024","article-title":"The emergence of spin electronics in data storage","volume":"6","author":"Chappert","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"2498","DOI":"10.1109\/JPROC.2013.2252317","article-title":"Overview of beyond-CMOS devices and a uniform methodology for their benchmarking","volume":"101","author":"Nikonov","year":"2013","journal-title":"Proc. IEEE"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"2269","DOI":"10.1109\/TMAG.2004.830219","article-title":"70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers","volume":"40","author":"Wang","year":"2004","journal-title":"IEEE Trans. Magn."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"868","DOI":"10.1038\/nmat1257","article-title":"Giant room-temperature magnetoresistance in single-crystal Fe\/MgO\/Fe magnetic tunnel junctions","volume":"3","author":"Yuasa","year":"2004","journal-title":"Nat. Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"862","DOI":"10.1038\/nmat1256","article-title":"Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers","volume":"3","author":"Parkin","year":"2004","journal-title":"Nat. Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"082508","DOI":"10.1063\/1.2976435","article-title":"Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB\/MgO\/CoFeB pseudo-spin-valves annealed at high temperature","volume":"93","author":"Ikeda","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"172615","DOI":"10.1063\/1.4870917","article-title":"Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications","volume":"115","author":"Thomas","year":"2014","journal-title":"J. Appl. Phys."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"187","DOI":"10.1038\/nnano.2015.24","article-title":"A new spin on magnetic memories","volume":"10","author":"Kent","year":"2015","journal-title":"Nat. Nanotech."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"178","DOI":"10.1063\/1.96254","article-title":"Perpendicular magnetic anisotropy in Pd\/Co thin film layered structures","volume":"47","author":"Carcia","year":"1985","journal-title":"Appl. Phys. Lett."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"5066","DOI":"10.1063\/1.340404","article-title":"Perpendicular magnetic anisotropy in Pd\/Co and Pt\/Co thin-film layered structures","volume":"63","author":"Carcia","year":"1988","journal-title":"J. Appl. Phys."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"4909","DOI":"10.1063\/1.343760","article-title":"Perpendicular magnetic anisotropy and magnetostriction of sputtered Co\/Pd and Co\/Pt multilayered films","volume":"66","author":"Hashimoto","year":"1989","journal-title":"J. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"07A917","DOI":"10.1063\/1.2838754","article-title":"Co\/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy","volume":"103","author":"Park","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"2407","DOI":"10.1109\/TMAG.2009.2018590","article-title":"Study on exchange-biased perpendicular magnetic tunnel junction","volume":"45","author":"Lim","year":"2009","journal-title":"IEEE Trans. Magn."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"232508","DOI":"10.1063\/1.3524230","article-title":"Ultrathin Co\/Pt and Co\/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions","volume":"97","author":"Yakushiji","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"17C721","DOI":"10.1063\/1.4798499","article-title":"Magnetic properties of MgO-[Co\/Pt] multilayers with a CoFeB insertion layer","volume":"113","author":"Ishikawa","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"232516","DOI":"10.1063\/1.3265740","article-title":"MgO barrier-perpendicular magnetic tunnel junctions with CoFe\/Pd multilayers and ferromagnetic insertion layers","volume":"95","author":"Mizunuma","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"09C712","DOI":"10.1063\/1.3358593","article-title":"Magnetic properties of TbFeCo-based perpendicular magnetic tunnel junctions","volume":"107","author":"Lee","year":"2010","journal-title":"J. Appl. Phys."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"721","DOI":"10.1038\/nmat2804","article-title":"A perpendicular-anisotropy CoFeB\u2013MgO magnetic tunnel junction","volume":"9","author":"Ikeda","year":"2010","journal-title":"Nat. Mater."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1848","DOI":"10.1016\/j.microrel.2012.06.035","article-title":"Failure and reliability analysis of STT-MRAM","volume":"52","author":"Zhao","year":"2012","journal-title":"Microelectron. Reliab."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1014","DOI":"10.1016\/j.physe.2009.11.110","article-title":"Electric field effects on magnetocrystalline anisotropy in ferromagnetic Fe monolayers","volume":"42","author":"Shimabukuro","year":"2010","journal-title":"Physica E Low-Dimens. Syst. Nanostruct."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"054401","DOI":"10.1103\/PhysRevB.84.054401","article-title":"First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces","volume":"84","author":"Yang","year":"2011","journal-title":"Phys. Rev. B"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"L1","DOI":"10.1016\/0304-8853(96)00062-5","article-title":"Current-driven excitation of magnetic multilayers","volume":"159","author":"Slonczewski","year":"1996","journal-title":"J. Magn. Magn. Mater."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"3118","DOI":"10.1063\/1.1707228","article-title":"Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions","volume":"84","author":"Huai","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1240003","DOI":"10.1142\/S2010324712400036","article-title":"Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI","volume":"2","author":"Ikeda","year":"2012","journal-title":"Spin"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"07A710","DOI":"10.1063\/1.2838335","article-title":"Spin transfer switching in TbCoFe\/CoFeB\/MgO\/CoFeB\/TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy","volume":"103","author":"Nakayama","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"022501","DOI":"10.1063\/1.3536482","article-title":"Spin torque switching of perpendicular Ta\/CoFeB\/MgO-based magnetic tunnel junctions","volume":"98","author":"Worledge","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"025001","DOI":"10.1088\/0022-3727\/45\/2\/025001","article-title":"Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy","volume":"45","author":"Zhao","year":"2012","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"012505","DOI":"10.1063\/1.2426902","article-title":"Effect of Ta getter on the quality of MgO tunnel barrier in the polycrystalline CoFeB\/MgO\/CoFeB magnetic tunnel junction","volume":"90","author":"Choi","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"043913","DOI":"10.1063\/1.4906096","article-title":"Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films","volume":"117","author":"Sinha","year":"2015","journal-title":"J. Appl. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"23","DOI":"10.1116\/1.570693","article-title":"Pattern fabrication by oblique incidence ion-beam etching","volume":"18","author":"Gokan","year":"1981","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"08JB02","DOI":"10.1143\/JJAP.49.08JB02","article-title":"Etching magnetic tunnel junction with metal etchers","volume":"49","author":"Kinoshita","year":"2010","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"08HA01","DOI":"10.1143\/JJAP.51.08HA01","article-title":"Damage recovery by reductive chemistry after methanol-based plasma etch to fabricate magnetic tunnel junctions","volume":"51","author":"Kinoshita","year":"2012","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"1841","DOI":"10.1116\/1.573775","article-title":"Chemically assisted sputter-etching of permalloy using CO or Cl2","volume":"4","author":"Vasile","year":"1986","journal-title":"J. Vac. Sci. Technol. A"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"4888","DOI":"10.1109\/20.278980","article-title":"Reactive ion etching of Fe-Si-Al alloy for thin film head","volume":"27","author":"Kinoshita","year":"1991","journal-title":"IEEE Trans. Magn."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"4448","DOI":"10.1109\/20.538896","article-title":"Ultramicro fabrications on Fe-Ni alloys using electron-beam writing and reactive-ion etching","volume":"32","author":"Nakatani","year":"1996","journal-title":"IEEE Trans. Magn."},{"unstructured":"Osada, T., Doi, M., Sakamoto, K., Maehara, H., and Kodaira, Y. (December, January 30). Dry etching of magnetic thin film stacks using CO\/NH3 and CH3OH gases for tunneling magneto-resistance devices. Proceedings of 4th International Symposium on Dry Process, Tokyo, Japan.","key":"ref_37"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"103001","DOI":"10.7567\/JJAP.53.103001","article-title":"Process-induced damage and its recovery for a CoFeB\u2013MgO magnetic tunnel junction with perpendicular magnetic easy axis","volume":"53","author":"Kinoshita","year":"2014","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"202402","DOI":"10.1063\/1.4766351","article-title":"Observation of boron diffusion in an annealed Ta\/CoFeB\/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission","volume":"101","author":"Greer","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"262501","DOI":"10.1063\/1.3457475","article-title":"Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes","volume":"96","author":"Kurt","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"085311","DOI":"10.1103\/PhysRevB.91.085311","article-title":"Role of boron diffusion in CoFeB\/MgO magnetic tunnel junctions","volume":"91","author":"Mukherjee","year":"2015","journal-title":"Phys. Rev. B"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"3829","DOI":"10.1109\/TMAG.2012.2203588","article-title":"Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO\/CoFe (B) based stack structures","volume":"48","author":"Ikeda","year":"2012","journal-title":"IEEE Trans. Magn."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"033916","DOI":"10.1063\/1.3621353","article-title":"Effect of cap layer thickness on the perpendicular magnetic anisotropy in top MgO\/CoFeB\/Ta structures","volume":"110","author":"Cheng","year":"2011","journal-title":"J. Appl. Phys."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"233908","DOI":"10.1063\/1.4811685","article-title":"A first-principles study on magnetocrystalline anisotropy at interfaces of Fe with non-magnetic metals","volume":"113","author":"Miura","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"032151","DOI":"10.1063\/1.4748337","article-title":"Large enhanced perpendicular magnetic anisotropy in CoFeB\/MgO system with the typical Ta buffer replaced by an Hf layer","volume":"2","author":"Liu","year":"2012","journal-title":"Aip Adv."},{"key":"ref_46","first-page":"1","article-title":"Perpendicular magnetic anisotropy in MgO\/CoFeB\/Nb and a comparison of the cap layer effect","volume":"50","author":"Lee","year":"2014","journal-title":"IEEE Trans. Magn."},{"doi-asserted-by":"crossref","unstructured":"Liu, T., Zhang, Y., Cai, J.W., and Pan, H.Y. (2014). Thermally robust Mo\/CoFeB\/MgO trilayers with strong perpendicular magnetic anisotropy. Sci. Rep., 4.","key":"ref_47","DOI":"10.1038\/srep05895"},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"259","DOI":"10.1016\/j.actamat.2015.01.022","article-title":"Highly stable perpendicular magnetic anisotropies of CoFeB\/MgO frames employing W buffer and capping layers","volume":"87","author":"An","year":"2015","journal-title":"Acta Mater."},{"doi-asserted-by":"crossref","unstructured":"Wang, M., Peng, S., Zhang, Y., Zhang, Y., Zhang, Y., Zhang, Q., Ravelosona, D., and Zhao, W. (2015, January 11\u201315). A Multi-Level Cell for STT-MRAM Realized by Capping Layer Adjustment. Proceedings of the IEEE Magnetics Conference, Beijing, China.","key":"ref_49","DOI":"10.1109\/INTMAG.2015.7156499"},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"093008","DOI":"10.1143\/APEX.5.093008","article-title":"High spin torque efficiency of magnetic tunnel junctions with MgO\/CoFeB\/MgO free layer","volume":"5","author":"Jan","year":"2012","journal-title":"Appl. Phys. Express"},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"022414","DOI":"10.1063\/1.4736727","article-title":"Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO\/CoFeB\/Ta\/CoFeB\/MgO recording structure","volume":"101","author":"Sato","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"4437","DOI":"10.1109\/TMAG.2013.2251326","article-title":"MgO\/CoFeB\/Ta\/CoFeB\/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis","volume":"49","author":"Sato","year":"2013","journal-title":"IEEE Trans. Magn."},{"doi-asserted-by":"crossref","unstructured":"Ikeda, S., Sato, H., Honjo, H., Enobio, E.C.I., Ishikawa, S., Yamanouchi, M., Fukami, S., Kanai, S., Matsukura, F., Endoh, T., and Ohno, H. (2014, January 15\u201317). Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm. Proceedings of the IEEE International Electron Devices Meeting, San Francisco, CA, USA.","key":"ref_53","DOI":"10.1109\/IEDM.2014.7047160"},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"083501","DOI":"10.1063\/1.3615654","article-title":"Charge trapping-detrapping mechanism of barrier breakdown in MgO magnetic tunnel junctions","volume":"99","author":"Sousa","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"036601","DOI":"10.1103\/PhysRevLett.106.036601","article-title":"Spin-torque ferromagnetic resonance induced by the spin Hall effect","volume":"106","author":"Liu","year":"2011","journal-title":"Phys. Rev. Lett."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"555","DOI":"10.1126\/science.1218197","article-title":"Spin-torque switching with the giant spin Hall effect of tantalum","volume":"336","author":"Liu","year":"2012","journal-title":"Science"},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"122404","DOI":"10.1063\/1.4753947","article-title":"Spin transfer torque devices utilizing the giant spin Hall effect of tungsten","volume":"101","author":"Pai","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"042406","DOI":"10.1063\/1.4863407","article-title":"Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction","volume":"104","author":"Cubukcu","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"548","DOI":"10.1038\/nnano.2014.94","article-title":"Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields","volume":"9","author":"Yu","year":"2014","journal-title":"Nat. Nanotech."},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"012403","DOI":"10.1063\/1.4858465","article-title":"Spin-Hall-assisted magnetic random access memory","volume":"104","author":"Cosemans","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"065001","DOI":"10.1088\/0022-3727\/48\/6\/065001","article-title":"Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque","volume":"48","author":"Wang","year":"2015","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"082407","DOI":"10.1063\/1.4866965","article-title":"Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W\/Hf\/CoFeB\/MgO layer structures","volume":"104","author":"Pai","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"112502","DOI":"10.1063\/1.3226676","article-title":"Wide range and tunable linear magnetic tunnel junction sensor using two exchange pinned electrodes","volume":"95","author":"Negulescu","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"142407","DOI":"10.1063\/1.3701277","article-title":"Tunable linear magnetoresistance in MgO magnetic tunnel junction sensors using two pinned CoFeB electrodes","volume":"100","author":"Chen","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"707","DOI":"10.1109\/TMAG.2004.839069","article-title":"Magneto-resistive sensors with perpendicular magnetic anisotropy","volume":"41","author":"Ding","year":"2005","journal-title":"IEEE Trans. Magn."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"17A320","DOI":"10.1063\/1.4914121","article-title":"Magnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer","volume":"117","author":"Lee","year":"2015","journal-title":"J. Appl. Phys."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"091301","DOI":"10.1143\/APEX.1.091301","article-title":"Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions","volume":"1","author":"Matsunaga","year":"2008","journal-title":"Appl. Phys. Express"},{"doi-asserted-by":"crossref","unstructured":"Zhao, W., Torres, L., Cargnini, L.V., Brum, R.M., Zhang, Y., Guillemenet, Y., Guillemenet, Y., Sassatelli, G., Lakys, Y., Klein, J.O., Etiemble, D., Ravelosona, D., and Chappert, C. (2011, January 3\u20135). High performance SoC design using magnetic logic and memory. Proceedings of the IEEE International Conference on Very Large Scale Integration, Hong Kong, China.","key":"ref_68","DOI":"10.1007\/978-3-642-32770-4_2"},{"unstructured":"Zhao, W., Belhaire, E., and Chappert, C. (2007, January 2\u20135). Spin-MTJ based non-volatile flip-flop. Nanotechnology, Proceedings of the IEEE conference, Hong Kong, China.","key":"ref_69"},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"819","DOI":"10.1109\/TED.2011.2178416","article-title":"Compact modeling of perpendicular-anisotropy CoFeB\/MgO magnetic tunnel junctions","volume":"59","author":"Zhang","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"doi-asserted-by":"crossref","unstructured":"Mahmoudi, H., Sverdlov, V., and Selberherr, S. (2012, January 17\u201321). MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems. Proceedings of the European Solid-State Device Research Conference, Brodeaux, France.","key":"ref_71","DOI":"10.1109\/ESSDERC.2012.6343381"},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"120","DOI":"10.1109\/TNANO.2011.2158848","article-title":"Magnetic tunnel junction-based spintronic logic units operated by spin transfer torque","volume":"11","author":"Yao","year":"2012","journal-title":"IEEE Trans. Nanotechnol."},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"266","DOI":"10.1038\/nnano.2010.31","article-title":"Proposal for an all-spin logic device with built-in memory","volume":"5","author":"Datta","year":"2010","journal-title":"Nat. Nanotech."},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"557","DOI":"10.1038\/nphys2331","article-title":"Highly efficient spin transport in epitaxial graphene on SiC","volume":"8","author":"Dlubak","year":"2012","journal-title":"Nat. Phys."},{"key":"ref_75","doi-asserted-by":"crossref","first-page":"072407","DOI":"10.1063\/1.4913303","article-title":"Proposal for a graphene-based all-spin logic gate","volume":"106","author":"Su","year":"2015","journal-title":"Appl. Phys. Lett."}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/8\/1023\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,14]],"date-time":"2025-01-14T16:08:09Z","timestamp":1736870889000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/6\/8\/1023"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,8,10]]},"references-count":75,"journal-issue":{"issue":"8","published-online":{"date-parts":[[2015,8]]}},"alternative-id":["mi6081023"],"URL":"https:\/\/doi.org\/10.3390\/mi6081023","relation":{},"ISSN":["2072-666X"],"issn-type":[{"type":"electronic","value":"2072-666X"}],"subject":[],"published":{"date-parts":[[2015,8,10]]}}}