{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,31]],"date-time":"2024-10-31T03:13:38Z","timestamp":1730344418038,"version":"3.28.0"},"reference-count":101,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.23919\/mixdes.2019.8787164","type":"proceedings-article","created":{"date-parts":[[2019,8,6]],"date-time":"2019-08-06T01:07:03Z","timestamp":1565053623000},"page":"15-25","source":"Crossref","is-referenced-by-count":66,"title":["A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics"],"prefix":"10.23919","author":[{"given":"Farzan","family":"Jazaeri","sequence":"first","affiliation":[]},{"given":"Arnout","family":"Beckers","sequence":"additional","affiliation":[]},{"given":"Armin","family":"Tajalli","sequence":"additional","affiliation":[]},{"given":"Jean-Michel","family":"Sallese","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1063\/1.5088164"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1038\/414883a"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511755361"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.47.777"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1119\/1.1463744"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2019.8662480"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.94.5.1634"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1088\/1367-2630\/15\/12\/123012"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.76.1037"},{"key":"ref34","doi-asserted-by":"crossref","first-page":"771","DOI":"10.1002\/1521-3978(200009)48:9\/11<771::AID-PROP771>3.0.CO;2-E","article-title":"The physical implementation of quantum computation","volume":"48","author":"divincenzo","year":"0","journal-title":"Fortschritte der Physik"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ICRC.2017.8123682"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.3.024010"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-017-01905-6"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/30156"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1088\/1742-6596\/834\/1\/012003"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1038\/nature11449"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037381"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4941421"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1109\/16.557714"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-017-0038-y"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1109\/16.3372"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838410"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2859636"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2018.2875821"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.906966"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4757-3318-1"},{"journal-title":"Low Temperature Electronics Physics Devices Circuits and Applications","year":"2000","author":"gutierrez-d","key":"ref57"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(94)90064-7"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1016\/0011-2275(85)90036-0"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2046458"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2854701"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0259-5"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1126\/science.1231298"},{"year":"0","key":"ref4"},{"year":"0","key":"ref3"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1007\/BF02650179"},{"year":"0","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1137\/S0097539795293172"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.75.1"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1985.0070"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/SFCS.1994.365700"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1063\/1.4950976"},{"year":"0","key":"ref45"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-018-0059-1"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.120.137702"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1038\/nphys1856"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1557\/mrs.2013.20"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573380"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2014.249"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2821763"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2798281"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2817458"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2017.8066592"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2019.03.033"},{"key":"ref77","first-page":"1","article-title":"Cryogenic temperature characterization of a 28 nm FD-SOI dedicated structure for advanced CMOS and quantum technologies cointegration","author":"galy","year":"2018","journal-title":"IEEE Journal of the Electron Devices Society"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.23919\/SNW.2017.8242338"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2018.8354742"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/11\/114001"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2903111"},{"journal-title":"Electronic Processes in Non-Crystalline Materials","year":"2012","author":"mott","key":"ref60"},{"key":"ref62","article-title":"Cryogenic MOSFET Threshold Voltage Model","author":"beckers","year":"2019","journal-title":"arXiv preprint arXiv 1904 01870"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(87)90190-0"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1063\/1.104723"},{"article-title":"Modeling nanowire and double-gate junctionless field-effect transistors","year":"2017","author":"jazaeri","key":"ref64"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1063\/1.345572"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1063\/1.3368122"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(82)90052-1"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/WOLTE.2014.6881018"},{"year":"0","key":"ref2"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/16.52436"},{"year":"0","key":"ref1"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2893302"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.1999.799247"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.862691"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2919924"},{"key":"ref91","doi-asserted-by":"publisher","DOI":"10.1109\/16.199361"},{"key":"ref90","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(94)90219-4"},{"key":"ref98","doi-asserted-by":"crossref","first-page":"1012","DOI":"10.1109\/T-ED.1986.22607","article-title":"short-channel effects in mosfet's at liquid-nitrogen temperature","volume":"33","author":"woo","year":"1986","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1002\/0470068329"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2010.5537861"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2018.8486859"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/237814.237866"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.79.325"},{"year":"0","key":"ref12"},{"year":"0","key":"ref13"},{"year":"0","key":"ref14"},{"year":"0","key":"ref15"},{"year":"0","key":"ref16"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1063\/1.3675862"},{"year":"0","key":"ref17"},{"key":"ref81","article-title":"Revised theoretical limit of the subthreshold swing in field-effect transistors","author":"beckers","year":"2019","journal-title":"arXiv preprint Version 2 arXiv 1811 09146"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms13575"},{"journal-title":"The Physics and Applications of Resonant Tunnelling Diodes","year":"2006","author":"mizuta","key":"ref84"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1126\/science.1231930"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1051\/jp4:1996305"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.64.755"},{"key":"ref89","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2763998"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1063\/1.1655067"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2010.5618207"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1063\/1.5043543"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.85.961"}],"event":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2019,6,27]]},"location":"Rzesz\u00f3w, Poland","end":{"date-parts":[[2019,6,29]]}},"container-title":["2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\""],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8777447\/8786996\/08787164.pdf?arnumber=8787164","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,3]],"date-time":"2019-09-03T01:25:09Z","timestamp":1567473909000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8787164\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":101,"URL":"https:\/\/doi.org\/10.23919\/mixdes.2019.8787164","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}