{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,7]],"date-time":"2024-08-07T01:01:41Z","timestamp":1722992501619},"reference-count":14,"publisher":"Fuji Technology Press Ltd.","issue":"5","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Automation Technol.","IJAT"],"published-print":{"date-parts":[[2015,9,5]]},"abstract":"Chemical mechanical polishing (CMP) is one of the most important processes for fabricating highly planarized substrates such as sapphire for light emitting diodes (LEDs). However, sapphire is categorized as a hard-to-process material; therefore, a long processing time is required because of the low polishing efficiency (i.e., removal rate). This study investigates the CMP mechanism for hard-to-process materials using the following polishing evaluation parameters: (1) the velocity ratio, which is defined as the ratio of slurry flow velocity between the wafer and polishing pad during CMP to the pad tangential velocity, (2) the standard deviation of the velocity ratio distribution, and (3) the polisher vibration acceleration during CMP. Each parameter was measured at five rotational speeds and two polishing pressures for a total of ten conditions using a commercially available single-sided polisher. Moreover, the influence of each parameter on the removal rate was demonstrated via a multiple correlation analysis. As a result, we revealed that the velocity ratio and polisher vibration acceleration are strongly related with the removal rate.<\/jats:p>","DOI":"10.20965\/ijat.2015.p0573","type":"journal-article","created":{"date-parts":[[2016,4,14]],"date-time":"2016-04-14T02:04:52Z","timestamp":1460599492000},"page":"573-579","source":"Crossref","is-referenced-by-count":10,"title":["Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher"],"prefix":"10.20965","volume":"9","author":[{"given":"Michio","family":"Uneda","sequence":"first","affiliation":[]},{"name":"Kanazawa Institute of Technology","sequence":"first","affiliation":[]},{"given":"Keiichi","family":"Takano","sequence":"additional","affiliation":[]},{"given":"Koji","family":"Koyama","sequence":"additional","affiliation":[]},{"given":"Hideo","family":"Aida","sequence":"additional","affiliation":[]},{"given":"Ken-ichi","family":"Ishikawa","sequence":"additional","affiliation":[]},{"name":"Namiki Precision Jewel Co., Ltd.","sequence":"additional","affiliation":[]}],"member":"8550","published-online":{"date-parts":[[2015,9,5]]},"reference":[{"key":"key-10.20965\/ijat.2015.p0573-1","doi-asserted-by":"crossref","unstructured":"\u00a0\tH. Aida, T. Doi, H. Takeda, H. Katakura, S.-W. Kim, K. Koyama, T. Yamazaki, and M. Uneda, \u201cUltraprecision CMP for sapphire, GaN and SiC for advanced optoelectronics materials,\u201d Current Applied Physics, Vol.12, pp. 41-46, 2012.","DOI":"10.1016\/j.cap.2012.02.016"},{"key":"key-10.20965\/ijat.2015.p0573-2","doi-asserted-by":"crossref","unstructured":"\u00a0\tI. P. Smirnova, L. K. Markov, D. A. Zakheim, E. M. Arakcheeva, and M. R. Rymalis, \u201cBlue Flip-Chip AlGaInN LEDs with Removed Sapphire Substrate,\u201d Semiconductors, Vol.40, No.11, pp. 1363-1367, 2006.","DOI":"10.1134\/S1063782606110194"},{"key":"key-10.20965\/ijat.2015.p0573-3","doi-asserted-by":"crossref","unstructured":"\u00a0\tK. Qin, B. Moudgil, and C.-W. Park, \u201cA chemical mechanical Polishing model incorporating both the chemical and mechanical effects,\u201d ELSEVIER Thin Solid Films, Vol.446, pp. 227-286, 2004.","DOI":"10.1016\/j.tsf.2003.09.060"},{"key":"key-10.20965\/ijat.2015.p0573-4","doi-asserted-by":"crossref","unstructured":"\u00a0\tY.-R. Jjeng, P.-Y. Huang, and W.-C. Pan, \u201cTribological Analysis of CMP with Partial Asperity Contact,\u201d J. of The Electrochemical Society, Vol.150, No.10, pp. 630-637, 2003.","DOI":"10.1149\/1.1602086"},{"key":"key-10.20965\/ijat.2015.p0573-5","doi-asserted-by":"crossref","unstructured":"\u00a0\tI.-H. Sung, H. J. Kim, and C. D. Yeo, \u201cFirst observation on the feasibility of scratch formation by pad-particle mixture in CMP process,\u201d Applied Surface Science, Vol.258, pp. 8298-8306, 2012.","DOI":"10.1016\/j.apsusc.2012.05.044"},{"key":"key-10.20965\/ijat.2015.p0573-6","doi-asserted-by":"crossref","unstructured":"\u00a0\tE. J. Terrell and C. F. Higgs III, \u201cHydrodynamics of Slurry Flow in Chemical Mechanical Polishing,\u201d J. of The Electrochemical Society, Vol.153, No.6, pp. K15-K22, 2006.","DOI":"10.1149\/1.2188329"},{"key":"key-10.20965\/ijat.2015.p0573-7","unstructured":"\u00a0\tM. Uneda, Y. Fukuta, K. Yokogawa, K. Hotta, H. Sugiyama, K. Tamai, H. Morinaga, and K.-I. Ishikawa, \u201cEffects of slurry flow sapphire-chemical mechanical polishing,\u201d J. of the japan Society for Abrasive Technology, Vol.58, No.9, pp. 583-588, 2014 (in Japanese)."},{"key":"key-10.20965\/ijat.2015.p0573-8","unstructured":"\u00a0\tM. Uneda, Y. Takahashi, K. Shibuya, Y. Nakamura, D. Ichikawa, and K.-I. Ishikawa, \u201cRelationships Between Removal Rate, Pad Surface Asperity and Polishing Head Vibration in Si-CMP,\u201d Proc. of Int. Conf. on Planarization\/CMP Technology 2013, P06, pp. 214-217, 2013."},{"key":"key-10.20965\/ijat.2015.p0573-9","doi-asserted-by":"crossref","unstructured":"\u00a0\tZ.-C. Lin and W.-S. Huang, \u201cA study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads,\u201d J. of Mechanical Science and Technology, Vol.26, No.8, pp. 2353-2364, 2012.","DOI":"10.1007\/s12206-012-0613-2"},{"key":"key-10.20965\/ijat.2015.p0573-10","unstructured":"\u00a0\tG. Keppel and S. Zedeck, \u201cData analysis for research designs,\u201d W. H. Freeman and Company, pp. 126-127, 1989."},{"key":"key-10.20965\/ijat.2015.p0573-11","doi-asserted-by":"crossref","unstructured":"\u00a0\tW. Xu, X. Lu, G. Pan, Y. Lei, and J. Luo, \u201cUltrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate,\u201d ELSEVIER Applied Surface Science, Vol.256, pp. 3936-3940, 2010.","DOI":"10.1016\/j.apsusc.2010.01.053"},{"key":"key-10.20965\/ijat.2015.p0573-12","doi-asserted-by":"crossref","unstructured":"\u00a0\tB. Park, S. Jeong, H. Lee, H. Kim, H. Jeong, and D. A. Dornfeld, \u201cExperimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing,\u201d Japanese J. of Applied Physics, Vol.48, No.116505, pp. 1-9, 2009.","DOI":"10.1143\/JJAP.48.116505"},{"key":"key-10.20965\/ijat.2015.p0573-13","doi-asserted-by":"crossref","unstructured":"\u00a0\tX. Han, Y. Hu, and S. Yu, \u201cInvestigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method,\u201d Applied Physics, A, Vol.95, pp. 899-905, 2009.","DOI":"10.1007\/s00339-009-5097-2"},{"key":"key-10.20965\/ijat.2015.p0573-14","unstructured":"\u00a0\tY. Moon, \u201cMechanical Aspects of the Material Removal Mechanism in Chemical Mechanical Polishing (CMP),\u201d University of California, Berkeley, p. 69, 1999."}],"container-title":["International Journal of Automation Technology"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.fujipress.jp\/main\/wp-content\/themes\/Fujipress\/phyosetsu.php?ppno=IJATE000900050017","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,16]],"date-time":"2017-06-16T01:54:46Z","timestamp":1497578086000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.fujipress.jp\/ijat\/au\/ijate000900050573"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9,5]]},"references-count":14,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2015,9,5]]},"published-print":{"date-parts":[[2015,9,5]]}},"URL":"https:\/\/doi.org\/10.20965\/ijat.2015.p0573","relation":{},"ISSN":["1883-8022","1881-7629"],"issn-type":[{"type":"electronic","value":"1883-8022"},{"type":"print","value":"1881-7629"}],"subject":[],"published":{"date-parts":[[2015,9,5]]}}}