乐胖代购免代理版

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T17:18:57Z","timestamp":1649006337937},"reference-count":24,"publisher":"Institute of Electronics, Information and Communications Engineers (IEICE)","issue":"5","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEICE Trans. Electron."],"published-print":{"date-parts":[[2016]]},"DOI":"10.1587\/transele.e99.c.547","type":"journal-article","created":{"date-parts":[[2016,4,30]],"date-time":"2016-04-30T18:11:03Z","timestamp":1462039863000},"page":"547-550","source":"Crossref","is-referenced-by-count":3,"title":["Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell"],"prefix":"10.1587","volume":"E99.C","author":[{"given":"Sungjun","family":"KIM","sequence":"first","affiliation":[{"name":"Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University"}]},{"given":"Min-Hwi","family":"KIM","sequence":"additional","affiliation":[{"name":"Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University"}]},{"given":"Seongjae","family":"CHO","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Gachon University"}]},{"given":"Byung-Gook","family":"PARK","sequence":"additional","affiliation":[{"name":"Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University"}]}],"member":"532","reference":[{"key":"1","doi-asserted-by":"crossref","unstructured":"[1] Y. Kim, J.Y. Seo, S.-H. Lee, and B.-G. Park, \u201cA new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory,\u201d J. Semicond. Technol. Sci., vol.14, no.5, pp.566-571, Oct. 2014.","DOI":"10.5573\/JSTS.2014.14.5.566"},{"key":"2","doi-asserted-by":"crossref","unstructured":"[2] S. Cho and B.-G. Park, \u201cA novel sensing scheme for reliable read operation of ultrathin-body vertical NAND flash memory devices,\u201d IEEE Trans. Electron Devices, vol.58, no.8, pp.2814-2817, Aug. 2011.","DOI":"10.1109\/TED.2011.2157508"},{"key":"3","doi-asserted-by":"crossref","unstructured":"[3] W. Kwon, I.J. Park, and C. Shin, \u201cHighly scalable NAND flash memory cell design embracing backside charge storage,\u201d J. Semicond. Technol. Sci., vol.15, no.2, pp.286-291, April 2015.","DOI":"10.5573\/JSTS.2015.15.2.286"},{"key":"4","doi-asserted-by":"crossref","unstructured":"[4] D. Cai, H. Chen, Q. Wang, Y. Chen, Z. Song, G. Wu, and S. Feng, \u201cAn 8-Mb phase-change random access memory chip based on a resistor-on-via-stacked-plug storage cell,\u201d IEEE Electron. Device Lett., vol.33, no.9, pp.1270-1272, Sept. 2012.","DOI":"10.1109\/LED.2012.2204952"},{"key":"5","doi-asserted-by":"crossref","unstructured":"[5] F. Jedema, \u201cPhase-change materials: Designing optical media of the future,\u201d Nat. Mater., vol.6, pp.90-91, Feb. 2007.","DOI":"10.1038\/nmat1832"},{"key":"6","doi-asserted-by":"crossref","unstructured":"[6] A. Brataas, A.D. Kent, and H. Ohno, \u201cCurrent-induced torques in magnetic materials,\u201d Nat. Mater., vol.11, pp.372-381, April 2012.","DOI":"10.1038\/nmat3311"},{"key":"7","doi-asserted-by":"crossref","unstructured":"[7] S. Kim, S. Jung, and B.-G. Park, \u201cEffects of conducting defects on resistive switching characteristics of SiN_{x<\/sub><\/i>-based resistive random-access memory with MIS structure,\u201d J. Vac. Sci. Technol. B, vol.33, pp.062201-1-062201-6, Dec. 2015.","DOI":"10.1116\/1.4931946"},{"key":"8","doi-asserted-by":"crossref","unstructured":"[8] S. Kim, S. Jung, M.-H. Kim, S. Cho, and B.-G. Park, \u201cResistive switching characteristics of silicon nitride-based RRAM depending on top electrodes metals,\u201d IEICE Trans. Electron., vol.E98-C, no.5, pp.429-433, May 2015.","DOI":"10.1587\/transele.E98.C.429"},{"key":"9","doi-asserted-by":"crossref","unstructured":"[9] S. Kim, S. Jung, M.-H. Kim, S. Cho, and B.-G. Park, \u201cResistive switching characteristics of Si_{3<\/sub>N_{4<\/sub>-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications,\u201d Appl. Phys. Lett., vol.106, pp.212106-1-212106-4, May 2015.","DOI":"10.1063\/1.4921926"},{"key":"10","doi-asserted-by":"crossref","unstructured":"[10] S. Kim, S. Jung, M.-H. Kim, S. Cho, and B.-G. Park, \u201cGradual bipolar resistive switching in Ni\/Si_{3<\/sub>N_{4<\/sub>\/n^{+<\/sup>-Si resistive-switching memory device for high-density integration and low-power applications,\u201d Solid-State Lett., vol.114, pp.94-97, Dec. 2015.","DOI":"10.1016\/j.sse.2015.08.003"},{"key":"11","doi-asserted-by":"crossref","unstructured":"[11] H.-D. Kim, M.J. Yun, and T.G. Kim, \u201cForming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbN_{x<\/sub><\/i> films,\u201d Phys. Status Solidi-R, vol.9, no.4, pp.264-268, March 2015.","DOI":"10.1002\/pssr.201510022"},{"key":"12","doi-asserted-by":"crossref","unstructured":"[12] K. Kim, K. Lee, K.-H. Lee, Y.-K. Park, and W.Y. Choi, \u201cA finite element model for bipolar resistive random access memory,\u201d J Semicond. Tech. Sci., vol.14, no.3, pp.268-271, June 2014.","DOI":"10.5573\/JSTS.2014.14.3.268"},{"key":"13","doi-asserted-by":"crossref","unstructured":"[13] A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki, \u201cResistance-switching characteristics of Si-rich oxide evaluated by using Ni nanodots as electrodes in conductive AFM measurements,\u201d IEICE Trans. Electron., vol.E98-C, no.5, pp.406-410, May 2015.","DOI":"10.1587\/transele.E98.C.406"},{"key":"14","doi-asserted-by":"crossref","unstructured":"[14] U. Russo, D. Ielmini, C. Cagli, and A.L. Lacaita, \u201cSelf-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices,\u201d IEEE Electron Device Lett., vol.56, no.2, pp.193-200, Feb. 2009.","DOI":"10.1109\/TED.2008.2010584"},{"key":"15","doi-asserted-by":"crossref","unstructured":"[15] R. Waser and M. Aono, \u201cNanoionics-based resistive switching memories,\u201d Nat. Mater., vol.6, no.11, pp.833-840, Nov. 2007.","DOI":"10.1038\/nmat2023"},{"key":"16","doi-asserted-by":"crossref","unstructured":"[16] H.-D. Kim, F. Crupi, M. Lukosius, A. Trusch, C. Walczyk, and C. Wenger, \u201cResistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods,\u201d J. Vac. Sci. Technol. B, vol.33, no.5, pp.052204-1-052204-5, Aug. 2015.","DOI":"10.1116\/1.4928412"},{"key":"17","unstructured":"[17] S. Kim, S. Cho, and B.-G. Park, \u201cFully Si compatible SiN resistive switching memory with large self-rectification ratio,\u201d AIP Adv., vol.6, no.1, pp.015021-1-212106-6, Jan. 2016."},{"key":"18","doi-asserted-by":"crossref","unstructured":"[18] S. Kim and B.-G. Park, \u201cTuning tunnel barrier in Si_{3<\/sub>N_{4<\/sub>-based resistive memory embedding SiO_{2<\/sub> for low-power and high-density cross-point array applications,\u201d J. Alloy. Compd., vol.663, pp.256-261, April 2016.","DOI":"10.1016\/j.jallcom.2015.12.107"},{"key":"19","doi-asserted-by":"crossref","unstructured":"[19] S. Kim, H. Kim, S. Jung, M.-H. Kim, S.-H. Lee, S. Cho, and B.-G. Park, \u201cTuning resistive switching parameters in Si_{3<\/sub>N_{4<\/sub>-based RRAM for three dimensional vertical resistive memory applications,\u201d J. Alloy. Compd., vol.663, pp.419-423, April 2016.","DOI":"10.1016\/j.jallcom.2015.10.142"},{"key":"20","doi-asserted-by":"crossref","unstructured":"[20] H.-D. Kim, M. Yun, and S. Kim, \u201cSelf-rectifying resistive switching behavior observed in Si_{3<\/sub>N_{4<\/sub>-based resistive random access memory devices,\u201d J. Alloy. Compd., vol.651, pp.340-343, Dec. 2015.","DOI":"10.1016\/j.jallcom.2015.08.082"},{"key":"21","doi-asserted-by":"crossref","unstructured":"[21] H.-D. Kim, M.J. Yun, and S. Kim, \u201cAll ITO-based transparent resistive switching random access memory using oxygen doping method,\u201d J. Alloy. Compd., vol.653, pp.534-538, Dec. 2015.","DOI":"10.1016\/j.jallcom.2015.09.076"},{"key":"22","doi-asserted-by":"crossref","unstructured":"[22] M.-W. Kwon, H. Kim, J. Park, and B.-G. Park, \u201cIntegrate-and-fire neuron circuit and synaptic device with floating body MOSFETs,\u201d J. Semicond. Technol. Sci., vol.14, no.6, pp.755-759, Dec. 2014.","DOI":"10.5573\/JSTS.2014.14.6.755"},{"key":"23","doi-asserted-by":"crossref","unstructured":"[23] R. Ranjan, M.-W. Kwon, J. Park, H. Kim, and B.-G. Park, \u201cNeuron circuit using a thyristor and inter-neuron connection with synaptic devices,\u201d J. Semicond. Technol. Sci., vol.15, no.3, pp.365-373, June 2015.","DOI":"10.5573\/JSTS.2015.15.3.365"},{"key":"24","doi-asserted-by":"crossref","unstructured":"[24] M.-W. Kwon, H. Kim, J. Park, and B.-G. Park, \u201cIntegrate-and-fire neuron circuit and synaptic device using floating body MOSFET with spike timing-dependent plasticity,\u201d J. Semicond. Technol. Sci., vol.15, no.6, pp.658-663, Dec. 2015.","DOI":"10.5573\/JSTS.2015.15.6.658"}],"container-title":["IEICE Transactions on Electronics"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E99.C\/5\/E99.C_547\/_pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,7]],"date-time":"2019-09-07T02:03:47Z","timestamp":1567821827000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.jstage.jst.go.jp\/article\/transele\/E99.C\/5\/E99.C_547\/_article"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016]]},"references-count":24,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2016]]}},"URL":"https:\/\/doi.org\/10.1587\/transele.e99.c.547","relation":{},"ISSN":["0916-8524","1745-1353"],"issn-type":[{"value":"0916-8524","type":"print"},{"value":"1745-1353","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016]]}}}}}}}}}}}}}}}}}