{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,5]],"date-time":"2022-04-05T07:43:29Z","timestamp":1649144609305},"reference-count":5,"publisher":"Hindawi Limited","license":[{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Journal of Sensors"],"published-print":{"date-parts":[[2015]]},"abstract":"The application of semifloating gate transistor (SFGT) as the single-transistor active pixel image sensor (APS) is investigated in this paper. This single-transistor (1T) APS can realize the functions of the conventional 3T CMOS image sensor. The device operation mechanism, optimization methods, and transient behavior measurements will be discussed. Because the floating junction of this device is connected to the floating gate, special behaviors such as floating gate voltage pinning effects were observed. The transient time measurement emulating the exposure procedure also confirmed the light sensing function as a single-transistor image sensor.<\/jats:p>","DOI":"10.1155\/2015\/167145","type":"journal-article","created":{"date-parts":[[2015,5,21]],"date-time":"2015-05-21T21:01:52Z","timestamp":1432242112000},"page":"1-11","source":"Crossref","is-referenced-by-count":2,"title":["Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate"],"prefix":"10.1155","volume":"2015","author":[{"given":"Xin-Yan","family":"Liu","sequence":"first","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Jun","family":"Wu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Xiao-Yong","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Shuai","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Xi","family":"Lin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Chun-Min","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"Peng-Fei","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]},{"given":"David Wei","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China"}]}],"member":"98","reference":[{"key":"1","year":"2008"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.3390\/s90100131"},{"issue":"1","key":"6","doi-asserted-by":"crossref","first-page":"S31","DOI":"10.1016\/j.nima.2010.04.081","volume":"636","year":"2011","journal-title":"Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2010.04.117"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2187060"}],"container-title":["Journal of Sensors"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2015\/167145.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2015\/167145.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2015\/167145.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T12:06:38Z","timestamp":1498219598000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.hindawi.com\/journals\/js\/2015\/167145\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015]]},"references-count":5,"alternative-id":["167145","167145"],"URL":"https:\/\/doi.org\/10.1155\/2015\/167145","relation":{},"ISSN":["1687-725X","1687-7268"],"issn-type":[{"value":"1687-725X","type":"print"},{"value":"1687-7268","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015]]}}}