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Federal Communications Commission, \"Code of Federal Regulations: Title 47, vol. 1, Part 15 Radio Frequency Devices,\" 2009."},{"key":"e_1_3_2_1_3_1","unstructured":"ETSI EN 302 567 V1.1.1 Harmonized European Standard Broadband Radio Access Networks (BRAN); 60 GHz Multiple-Gigabit WAS\/RLAN Systems; Harmonized EN covering the essential requirements of article 3.2 of the R&TTE Directive \" 2009. ETSI EN 302 567 V1.1.1 Harmonized European Standard Broadband Radio Access Networks (BRAN); 60 GHz Multiple-Gigabit WAS\/RLAN Systems; Harmonized EN covering the essential requirements of article 3.2 of the R&TTE Directive \" 2009."},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/MWC.2011.6108325"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1049\/el.2014.1979"},{"key":"e_1_3_2_1_6_1","doi-asserted-by":"publisher","DOI":"10.1017\/S1759078711001073"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-011-9819-y"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/22.392911"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2275662"},{"key":"e_1_3_2_1_10_1","first-page":"279","volume-title":"IEEE RF Integr. Circuits Symp.","author":"Shirinfar F.","year":"2013","unstructured":"F. Shirinfar , M. Nariman , T. Sowlati , M. Rofougaran , R. Rofougaran , and S. Pamarti \"A Fully Integrated 22.6dBm mm-Wave PA in 40nm CMOS,\" IEEE RF Integr. Circuits Symp. , pp. 279 -- 282 , 2013 . F. Shirinfar, M. Nariman, T. Sowlati, M. Rofougaran, R. Rofougaran, and S. Pamarti \"A Fully Integrated 22.6dBm mm-Wave PA in 40nm CMOS,\" IEEE RF Integr. Circuits Symp., pp. 279--282, 2013."},{"key":"e_1_3_2_1_11_1","first-page":"65","volume-title":"IEEE RF Integr. Circuits Symp.","author":"Ogunnika O. T.","year":"2012","unstructured":"O. T. Ogunnika and A. Valdes-Garcia \"A 60G Hz Class- E Tuned Power Amplifier with PAE >25% in 32nm SOI CMOS,\" IEEE RF Integr. Circuits Symp. , pp. 65 -- 68 , 2012 . O. T. Ogunnika and A. Valdes-Garcia \"A 60GHz Class-E Tuned Power Amplifier with PAE >25% in 32nm SOI CMOS,\" IEEE RF Integr. Circuits Symp., pp. 65--68, 2012."},{"key":"e_1_3_2_1_12_1","first-page":"35","volume-title":"IEEE RF Integr. Circuits Symp.","author":"Cohen E.","year":"2009","unstructured":"E. Cohen , S. Ravid , and D. Ritter \"60GHz 45nm PA for Linear OFDM Signal with Predistortion Correction achieving 6.1% PAE and -28dB EVM\" IEEE RF Integr. Circuits Symp. , pp. 35 -- 38 , 2009 . E. Cohen, S. Ravid, and D. Ritter \"60GHz 45nm PA for Linear OFDM Signal with Predistortion Correction achieving 6.1% PAE and -28dB EVM\" IEEE RF Integr. Circuits Symp., pp. 35--38, 2009."},{"key":"e_1_3_2_1_13_1","first-page":"533","volume-title":"IEEE RF Integr. Circuits Symp.","author":"Abbasi M.","year":"2010","unstructured":"M. Abbasi , T. Kjellberg , A. de Graauw , E. v. d. Heijden , R. Roovers , and H. Zirath \"A Broadband Differential Cascode Power Amplifier in 45 nm CMOS for High-Speed 60 G Hz System-on-Chip,\" IEEE RF Integr. Circuits Symp. , pp. 533 -- 536 , 2010 . M. Abbasi, T. Kjellberg, A. de Graauw, E. v. d. Heijden, R. Roovers, and H. Zirath \"A Broadband Differential Cascode Power Amplifier in 45 nm CMOS for High-Speed 60 GHz System-on-Chip,\" IEEE RF Integr. Circuits Symp., pp. 533--536, 2010."},{"key":"e_1_3_2_1_14_1","first-page":"382","volume-title":"Solid-State Circuits Conf.","author":"Raczkowski K.","year":"2009","unstructured":"K. Raczkowski , S. Thijs , W. De Raedt , B. Nauwelaers , and P. Wambacq , \" 50-to-67GHz ESD-protected power amplifiers in digital 45nm LP CMOS,\" IEEE Int . Solid-State Circuits Conf. pp. 382 -- 383a , 2009 . K. Raczkowski, S. Thijs, W. De Raedt, B. Nauwelaers, and P. Wambacq, \"50-to-67GHz ESD-protected power amplifiers in digital 45nm LP CMOS,\" IEEE Int. Solid-State Circuits Conf. pp. 382--383a, 2009."},{"key":"e_1_3_2_1_15_1","first-page":"1","volume-title":"IEEE Compound Semiconductor Integr. Circuit Symp.","author":"Kjellberg T.","year":"2009","unstructured":"T. Kjellberg , M. Abbasi , M. Ferndahl , A. de Graauw , E. v. d. Heijden , and H. Zirath \"A Compact Cascode Power Amplifier in 45-nm CMOS for 60-G Hz Wireless Systems ,\" IEEE Compound Semiconductor Integr. Circuit Symp. , pp. 1 -- 4 , 2009 . T. Kjellberg, M. Abbasi, M. Ferndahl, A. de Graauw, E. v. d. Heijden, and H. Zirath \"A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems,\" IEEE Compound Semiconductor Integr. Circuit Symp., pp. 1--4, 2009."},{"key":"e_1_3_2_1_16_1","first-page":"1","volume-title":"IEEE RF Integr. Circuits Symp.","author":"Essing J.","year":"2011","unstructured":"J. Essing , R. Mahmoudi , Y. Pei , and A. v. Roermund \"A Fully Integrated 60G Hz Distributed Transformer Power Amplifier in Bulky CMOS 45nm,\" IEEE RF Integr. Circuits Symp. , pp. 1 -- 4 , 2011 . J. Essing, R. Mahmoudi, Y. Pei, and A. v. Roermund \"A Fully Integrated 60GHz Distributed Transformer Power Amplifier in Bulky CMOS 45nm,\" IEEE RF Integr. Circuits Symp., pp. 1--4, 2011."},{"key":"e_1_3_2_1_17_1","first-page":"1","volume-title":"Solid-State Circuits Conf.","author":"Larie A.","year":"2015","unstructured":"A. Larie , E. Kerherve , B. Martineau , L. Vogt , and D. Belot , \" A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC,\" IEEE Int . Solid-State Circuits Conf. pp. 1 -- 3 , 2015 . A. Larie, E. Kerherve, B. Martineau, L. Vogt, and D. Belot, \"A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC,\" IEEE Int. Solid-State Circuits Conf. pp. 1--3, 2015."},{"key":"e_1_3_2_1_18_1","first-page":"1","article-title":"A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS","author":"Thyagarajan S. V.","year":"2013","unstructured":"S. V. Thyagarajan , A. M. Niknejad , C. D. Hull , \" A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS ,\" IEEE Custom Integrated Circuits Conference , pp. 1 -- 4 , 2013 . S. V. Thyagarajan, A. M. Niknejad, C. D. Hull, \"A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS,\" IEEE Custom Integrated Circuits Conference, pp.1--4, 2013.","journal-title":"IEEE Custom Integrated Circuits Conference"},{"key":"e_1_3_2_1_19_1","first-page":"268","volume-title":"Solid-State Circuits Conf.","author":"Vidojkovic V.","year":"2012","unstructured":"V. Vidojkovic , G. Mangraviti , K. Khalaf , V. Szortyka , K. Vaesen , W. Van Thillo , B. Parvais , M. Libois , S. Thijs , J. R. Long , C. Soens , and P. Wambacq , \" A Low-Power 57-to-66GHz Transceiver in 40nm LP CMOS with -17dB EVM at 7Gb\/s,\" IEEE Int . Solid-State Circuits Conf. , pp. 268 -- 270 , 2012 . V. Vidojkovic, G. Mangraviti, K. Khalaf, V. Szortyka, K. Vaesen, W. Van Thillo, B. Parvais, M. Libois, S. Thijs, J. R. Long, C. Soens, and P. Wambacq, \"A Low-Power 57-to-66GHz Transceiver in 40nm LP CMOS with -17dB EVM at 7Gb\/s,\" IEEE Int. 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