{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,6]],"date-time":"2024-08-06T21:43:09Z","timestamp":1722980589003},"reference-count":50,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2017,9,1]],"date-time":"2017-09-01T00:00:00Z","timestamp":1504224000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"name":"KUSTAR\u2013KUIRF2","award":["2014-210066"]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2017,9]]},"DOI":"10.1109\/tcsi.2017.2706299","type":"journal-article","created":{"date-parts":[[2017,8,9]],"date-time":"2017-08-09T18:11:02Z","timestamp":1502302262000},"page":"2427-2437","source":"Crossref","is-referenced-by-count":37,"title":["An Efficient Heterogeneous Memristive xnor for In-Memory Computing"],"prefix":"10.1109","volume":"64","author":[{"ORCID":"http:\/\/orcid.org\/0000-0002-8610-3064","authenticated-orcid":false,"given":"Muath","family":"Abu Lebdeh","sequence":"first","affiliation":[]},{"given":"Heba","family":"Abunahla","sequence":"additional","affiliation":[]},{"given":"Baker","family":"Mohammad","sequence":"additional","affiliation":[]},{"given":"Mahmoud","family":"Al-Qutayri","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","article-title":"Memristor device modeling and circuit design for read out integrated circuits, memory architectures, and neuromorphic systems","author":"yakopcic","year":"2014"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/NANOARCH.2010.5510936"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2016.09.027"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2013.06.095"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1021\/am403497y"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/25\/254003"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2016.7870045"},{"key":"ref36","first-page":"31","article-title":"10 × 10 nm2 Hf\/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation","author":"govoreanu","year":"2011","journal-title":"IEDM Tech Dig"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.4800229"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.6b05010"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.1831560"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/1.2001146"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2622225"},{"key":"ref2","first-page":"1718","article-title":"Memristor based computation-in-memory architecture for data-intensive applications","author":"hamdioui","year":"2015","journal-title":"Proc Design Autom Test Eur Conf Exhibit"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"311","DOI":"10.1515\/ntrev-2015-0029","article-title":"State of the art of metal oxide memristor devices","volume":"5","author":"mohammad","year":"2016","journal-title":"Rev Nanotechnol"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2014.2357351"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2014.06.006"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201532872"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1007\/s12668-014-0132-y"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2013.2244434"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2010584"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/MCAS.2016.2583673"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2310200"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2014.2357292"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2012.2217153"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2013.2275178"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2015.2435531"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2014.09.005"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2011.2165067"},{"key":"ref15","first-page":"1","article-title":"MRL—Memristor ratioed logic","author":"kvatinsky","year":"2012","journal-title":"Cellular Nanoscale Networks and their Applications (CNNA) 13th International Workshop on"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/DCAS.2016.7791136"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ICM.2016.7847939"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TNNLS.2016.2547842"},{"key":"ref19","author":"maan","year":"2016","journal-title":"Voltage controlled memristor threshold logic gates"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1371\/journal.pone.0085175"},{"key":"ref6","author":"nazarian","year":"2013","journal-title":"Crossbar resistive memory The future technology for NAND flash"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-012-6902-x"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2011.6081389"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1038\/nature08940"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/ISIT.2013.6620207"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2282132"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2570248"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2012.10.001"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1145\/1785481.1785548"},{"key":"ref47","author":"williams","year":"2010","journal-title":"Finding the missing memristor"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1063\/1.3236506"},{"key":"ref41","first-page":"6","article-title":"3D-stackable crossbar resistive memory based on Field Assisted Super-linear Threshold (FAST) selector","author":"jo","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2572726"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-02630-5_27"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/8017677\/08006295.pdf?arnumber=8006295","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:59:41Z","timestamp":1642006781000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8006295\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,9]]},"references-count":50,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2017.2706299","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,9]]}}}