{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,6]],"date-time":"2024-10-06T00:46:10Z","timestamp":1728175570524},"reference-count":28,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2015,7,1]],"date-time":"2015-07-01T00:00:00Z","timestamp":1435708800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2015,7]]},"DOI":"10.1109\/jssc.2015.2409295","type":"journal-article","created":{"date-parts":[[2015,3,23]],"date-time":"2015-03-23T18:36:41Z","timestamp":1427135801000},"page":"1618-1628","source":"Crossref","is-referenced-by-count":76,"title":["A 40\u201367 GHz Power Amplifier With 13 dBm ${\\rm P}_{\\rm SAT}$ and 16% PAE in 28 nm CMOS LP"],"prefix":"10.1109","volume":"50","author":[{"given":"Matteo","family":"Bassi","sequence":"first","affiliation":[]},{"given":"Junlei","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Bevilacqua","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Ghilioni","sequence":"additional","affiliation":[]},{"given":"Andrea","family":"Mazzanti","sequence":"additional","affiliation":[]},{"given":"Francesco","family":"Svelto","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2010.5477384"},{"key":"ref11","first-page":"382","article-title":"50-to-67 GHz ESD-protected power amplifiers in digital 45 nm LP CMOS","author":"raczkowski","year":"2009","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1002\/mop.28062"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2011.2125985"},{"key":"ref14","first-page":"432","article-title":"A compact 1 V 18.6 dBm 60 GHz power amplifier in 65 nm CMOS","author":"jiashu","year":"2011","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref15","first-page":"248","article-title":"A 0.9 V 20.9 dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40 nm CMOS","author":"zhao","year":"2014","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"505","DOI":"10.1109\/TMTT.2012.2226055","article-title":"A 2-D distributed power combining by metamaterial-based zero phase shifter for 60-GHz power amplifier in 65-nm CMOS","volume":"61","author":"wei","year":"2013","journal-title":"IEEE Trans Microw Theory Tech"},{"key":"ref17","author":"bode","year":"1945","journal-title":"Network Analysis and Feedback Amplifier Design"},{"key":"ref18","doi-asserted-by":"crossref","first-page":"3502","DOI":"10.1109\/TMTT.2012.2216285","article-title":"A 1.2-V 5.2-mW 20?30-GHz wideband receiver front-end in 0.18-$\\mu$<\/tex><\/formula>m CMOS","volume":"60","author":"li","year":"2012","journal-title":"IEEE Trans Microw Theory Tech"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2038126"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177009"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2008.4523306"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032583"},{"key":"ref27","first-page":"1","article-title":"A 55?67 GHz power amplifier with 13.6% PAE in 65 nm standard CMOS","author":"wang","year":"2011","journal-title":"Proc IEEE RFIC"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2077171"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2100251"},{"key":"ref8","first-page":"179","article-title":"A 40?67 GHz power amplifier with 13 dBm PSAT and 16% PAE in 28 nm CMOS LP","author":"zhao","year":"2014","journal-title":"Proc ESSCIRC"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2077150"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2022918"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2013.6658408"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032584"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2275662"},{"key":"ref22","author":"besser","year":"2002","journal-title":"Practical RF Circuit Design for Modern Wireless Systems"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2039274"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/4.868049"},{"key":"ref23","author":"pozar","year":"1997","journal-title":"Microwave Engineering"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2166662"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2010984"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/4\/7131594\/07065334.pdf?arnumber=7065334","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:47:24Z","timestamp":1642006044000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7065334\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,7]]},"references-count":28,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2015.2409295","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,7]]}}}