{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,8]],"date-time":"2023-09-08T13:25:31Z","timestamp":1694179531697},"reference-count":24,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2011,1,1]],"date-time":"2011-01-01T00:00:00Z","timestamp":1293840000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[2011,1]]},"DOI":"10.1109\/jssc.2010.2084491","type":"journal-article","created":{"date-parts":[[2010,10,27]],"date-time":"2010-10-27T20:13:03Z","timestamp":1288210383000},"page":"52-63","source":"Crossref","is-referenced-by-count":25,"title":["A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology"],"prefix":"10.1109","volume":"46","author":[{"given":"Guido","family":"De Sandre","sequence":"first","affiliation":[]},{"given":"Luca","family":"Bettini","sequence":"additional","affiliation":[]},{"given":"Alessandro","family":"Pirola","sequence":"additional","affiliation":[]},{"given":"Lionel","family":"Marmonier","sequence":"additional","affiliation":[]},{"given":"Marco","family":"Pasotti","sequence":"additional","affiliation":[]},{"given":"Massimo","family":"Borghi","sequence":"additional","affiliation":[]},{"given":"Paolo","family":"Mattavelli","sequence":"additional","affiliation":[]},{"given":"Paola","family":"Zuliani","sequence":"additional","affiliation":[]},{"given":"Luca","family":"Scotti","sequence":"additional","affiliation":[]},{"given":"Gianfranco","family":"Mastracchio","sequence":"additional","affiliation":[]},{"given":"Ferdinando","family":"Bedeschi","sequence":"additional","affiliation":[]},{"given":"Roberto","family":"Gastaldi","sequence":"additional","affiliation":[]},{"given":"Roberto","family":"Bez","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.859016"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.888349"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.908001"},{"key":"ref13","first-page":"268","article-title":"a 90 nm embedded phase-change memory with 1.2 v 12 ns read access time and 1 mb\/s write throughput","author":"de sandre","year":"2010","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2006.1705247"},{"key":"ref15","first-page":"474","article-title":"a 512 kb embedded phase change memory with 416 kb\/s write throughput at 100 $\\mu$<\/tex><\/formula>a cell write current","author":"hanzawa","year":"2007","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref16","first-page":"1","article-title":"ta $_{2}$<\/tex><\/formula>o $_{5}$<\/tex><\/formula> interfacial layer between gst and w plug enabling low power operation of phase change memories","author":"matsui","year":"2006","journal-title":"IEDM Tech Dig"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.916028"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2008.4681826"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2006439"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2010.5433916"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424409"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"877","DOI":"10.1109\/JSSC.2005.845564","article-title":"a 130-nm 0.9-v 66-mhz 8-mb (256 k$\\,\\times\\,$<\/tex> <\/formula>32) local sonos embedded flash eeprom","volume":"40","author":"seo","year":"2005","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2004.1345368"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424413"},{"key":"ref7","first-page":"81","article-title":"a 40 ns random access time low voltage 2 mbits eeprom memory for embedded applications","author":"daga","year":"2003","journal-title":"Proc MTDT"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424415"},{"key":"ref1","article-title":"international technology roadmap for semiconductors","year":"2009","journal-title":"Edition Emerging Research Devices"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"293","DOI":"10.1109\/JSSC.2004.837974","article-title":"a 0.18- $\\mu$<\/tex><\/formula>m 3.0-v 64-mb nonvolatile phase-transition random access memory (pram)","volume":"40","author":"cho","year":"2005","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref20","year":"2002","journal-title":"Programming a phase-change memory with slow quench time"},{"key":"ref22","first-page":"478","article-title":"a 0.13 $\\mu$<\/tex><\/formula>m 2.125 mb 23.5 ns embedded flash with 2 gb\/s read throughput for automotive microcontrollers","author":"deml","year":"2007","journal-title":"IEEE ISSCC Dig Tech Papers"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/NVMT.2009.5429783"},{"key":"ref24","first-page":"1516","article-title":"key design techniques of a 40 ns 16 k bits embedded eeprom memory","author":"xu","year":"2004","journal-title":"Proc ICCCAS"},{"key":"ref23","first-page":"67","article-title":"12 ns random access time in pipeline mode for high performance embedded flash applications in a 0.13 $\\mu$<\/tex><\/formula>m technology","author":"farenc","year":"2004","journal-title":"Proc NSMW"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4\/5673672\/05607321.pdf?arnumber=5607321","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,11]],"date-time":"2021-10-11T00:43:31Z","timestamp":1633913011000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5607321\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,1]]},"references-count":24,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/jssc.2010.2084491","relation":{},"ISSN":["0018-9200","1558-173X"],"issn-type":[{"value":"0018-9200","type":"print"},{"value":"1558-173X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,1]]}}}