{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T07:24:14Z","timestamp":1730273054693,"version":"3.28.0"},"reference-count":41,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,3,4]],"date-time":"2020-03-04T00:00:00Z","timestamp":1583280000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,3,4]],"date-time":"2020-03-04T00:00:00Z","timestamp":1583280000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,3,4]],"date-time":"2020-03-04T00:00:00Z","timestamp":1583280000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,3,4]]},"DOI":"10.1109\/isdcs49393.2020.9262984","type":"proceedings-article","created":{"date-parts":[[2020,11,23]],"date-time":"2020-11-23T23:43:10Z","timestamp":1606174990000},"page":"1-6","source":"Crossref","is-referenced-by-count":1,"title":["First Principles Based Compact Model for 2D-Channel MOSFETs"],"prefix":"10.1109","author":[{"given":"Biswapriyo","family":"Das","sequence":"first","affiliation":[]},{"given":"Santanu","family":"Mahapatra","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"crossref","first-page":"1571","DOI":"10.1109\/T-ED.1980.20072","article-title":"Transient analysis of MOS transistors","volume":"27","author":"oh","year":"1980","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1007\/BF01589116"},{"journal-title":"QuantumATK with Virtual NanoLab Synopsys Denmark","year":"0","key":"ref33"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2794381"},{"journal-title":"Operation and Modeling of the MOS Transistor","year":"2011","author":"tsividis","key":"ref31"},{"key":"ref30","first-page":"777","article-title":"Simple model of current-voltage characteristics of a metal–insulator–semiconductor transistor","volume":"24","author":"zebrev","year":"1990","journal-title":"Fiz Tekhn Polupr (Sov Phys Semiconductors)"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.13.5188"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1016\/j.cpc.2015.05.011"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.88.085117"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1021\/nn507278b"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.93.035414"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1021\/nn501723y"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1021\/nn402954e"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"3788","DOI":"10.1021\/nl301702r","article-title":"High-performance single layered WSe2 p-FETs with chemically doped contacts","volume":"12","author":"fang","year":"2012","journal-title":"Nano Lett"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1021\/nn501150r"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"100","DOI":"10.1038\/nnano.2012.224","article-title":"Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics","volume":"8","author":"georgiou","year":"2013","journal-title":"Nat Nanotech"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4982691"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"1858","DOI":"10.1021\/acs.nanolett.5b04936","article-title":"Metal-insulator-semiconductor diode consisting of two-dimensional nanomaterials","volume":"16","author":"jeong","year":"2016","journal-title":"Nano Lett"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.6b00980"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4205"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2643698"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"3768","DOI":"10.1021\/nl2018178","article-title":"How good can monolayer MoS2 transistors be?","volume":"11","author":"yoon","year":"2011","journal-title":"Nano Lett"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2797172"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2006.142"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1021\/nn500676t"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1038\/s41699-018-0073-3"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-017-0035-5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5b01341"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1021\/nn5027388"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"10451","DOI":"10.1073\/pnas.0502848102","article-title":"Two-dimensional atomic crystals","volume":"102","author":"novoselov","year":"2005","journal-title":"Proc Natl Acad Sci"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201505070"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric field effect in atomically thin Carbon films","volume":"306","author":"novoselov","year":"2004","journal-title":"Science"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2014.26"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1021\/nl501962c"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1021\/nn2024557"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"journal-title":"Analog Circuit Simulator – Users’ Manual version 4 10 6 R","year":"2014","key":"ref41"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2365028"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1126\/science.1228006"}],"event":{"name":"2020 International Symposium on Devices, Circuits and Systems (ISDCS)","start":{"date-parts":[[2020,3,4]]},"location":"Howrah, India","end":{"date-parts":[[2020,3,6]]}},"container-title":["2020 International Symposium on Devices, Circuits and Systems (ISDCS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9262967\/9262968\/09262984.pdf?arnumber=9262984","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,28]],"date-time":"2022-06-28T21:54:36Z","timestamp":1656453276000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9262984\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,3,4]]},"references-count":41,"URL":"https:\/\/doi.org\/10.1109\/isdcs49393.2020.9262984","relation":{},"subject":[],"published":{"date-parts":[[2020,3,4]]}}}