{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T21:10:38Z","timestamp":1725743438921},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764571","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"7A.3-1-7A.3-6","source":"Crossref","is-referenced-by-count":1,"title":["Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K"],"prefix":"10.1109","author":[{"given":"Lauriane","family":"Contamin","sequence":"first","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000"}]},{"given":"Mikael","family":"Casse","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000"}]},{"given":"Xavier","family":"Garros","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000"}]},{"given":"Fred","family":"Gaillard","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000"}]},{"given":"Maud","family":"Vinet","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000"}]},{"given":"Philippe","family":"Galy","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Crolles R&D Center,Crolles,France,38926"}]},{"given":"Andre","family":"Juge","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Crolles R&D Center,Crolles,France,38926"}]},{"given":"Emmanuel","family":"Vincent","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Crolles R&D Center,Crolles,France,38926"}]},{"given":"Silvano","family":"de Franceschi","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, IRIG,Grenoble,France,F-38000"}]},{"given":"Tristan","family":"Meunier","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS,Institut Néel,Grenoble,France,F-38000"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2828465"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353688"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-7909-3"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/5.0007100"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.04.009"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2005.04.092"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.2989629"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.7567\/SSDM.2006.P-1-10"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6532037"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2021.108175"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4757-3318-1"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037381"},{"journal-title":"Low Temperature Electronics Physics Devices Circuits and Applications","year":"2000","author":"guti\u00e9rrez-d","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242497"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128316"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3116931"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/EUROSOI-ULIS49407.2020.9365297"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265034"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720501"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764571.pdf?arnumber=9764571","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T20:41:54Z","timestamp":1655239314000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764571\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764571","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}