{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T15:43:09Z","timestamp":1729611789379,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343347","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T17:06:42Z","timestamp":1352999202000},"page":"117-120","source":"Crossref","is-referenced-by-count":0,"title":["Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells"],"prefix":"10.1109","author":[{"given":"Valentina","family":"Bonfiglio","sequence":"first","affiliation":[]},{"given":"Giuseppe","family":"Iannaccone","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2144985"},{"key":"2","first-page":"970","article-title":"Variability effects on the vt distribution of nanoscale nand flash memories","author":"spessot","year":"2010","journal-title":"Proc IRPS"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2005.846929"},{"key":"1","first-page":"49","article-title":"Vth fluctuations in nanoscale floating gate memories","author":"calderoni","year":"2008","journal-title":"Proc SISPAD"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.813457"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1993.347215"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2167511"},{"year":"2011","key":"4"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/16.974757"},{"key":"8","doi-asserted-by":"crossref","first-page":"426","DOI":"10.1117\/12.534926","article-title":"Effect of line-edge roughness (ler) and line-width roughness (lwr) on sub-100-nm device performance","volume":"5376","author":"lee","year":"2004","journal-title":"Proc SPIE"},{"key":"11","first-page":"537","article-title":"The impedance field method of noise calculation in active semiconductor devices","author":"shockley","year":"1966","journal-title":"Quantum Theory of Atoms Molecules and the Solid State A tribute to John C Slater"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343347.pdf?arnumber=6343347","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T02:43:03Z","timestamp":1498012983000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343347\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343347","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}