{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T00:53:44Z","timestamp":1725584024134},"reference-count":28,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,12,5]],"date-time":"2021-12-05T00:00:00Z","timestamp":1638662400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,12,5]],"date-time":"2021-12-05T00:00:00Z","timestamp":1638662400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,12,5]],"date-time":"2021-12-05T00:00:00Z","timestamp":1638662400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,12,5]]},"DOI":"10.1109\/bcicts50416.2021.9682483","type":"proceedings-article","created":{"date-parts":[[2022,1,25]],"date-time":"2022-01-25T20:41:07Z","timestamp":1643143267000},"page":"1-7","source":"Crossref","is-referenced-by-count":1,"title":["The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications"],"prefix":"10.1109","author":[{"given":"Peter","family":"Magnee","sequence":"first","affiliation":[]},{"given":"Domine","family":"Leenaerts","sequence":"additional","affiliation":[]},{"given":"Mark","family":"Van der Heijden","sequence":"additional","affiliation":[]},{"given":"Thanh Viet","family":"Dinh","sequence":"additional","affiliation":[]},{"given":"Ivan","family":"To","sequence":"additional","affiliation":[]},{"given":"Ihor","family":"Brunets","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS45179.2019.8972757"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8551061"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2355819"},{"key":"ref13","first-page":"9","article-title":"A 45nm 76–81 GHz CMOS radar receiver for automotive applications","author":"sahu","year":"2019","journal-title":"IEEE Asian SSCC"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2021.3075437"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JMW.2020.3033616"},{"key":"ref16","first-page":"45","article-title":"A 32 GHz 20 dBm-Psat Transformer-based Doherty Power Amplifier for multi-Gb\/s 5G Applications in 28 nm Bulk CMOS","author":"indirayanti","year":"2017","journal-title":"IEEE RFIC"},{"key":"ref17","first-page":"236","article-title":"A 31GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psat in 28nm FD-SOI CMOS","author":"torres","year":"2018","journal-title":"IEEE RFIC"},{"journal-title":"RF Power Amplifiers for Wireless Communications","year":"2006","author":"cripps","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS48439.2020.9392953"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2019.8701767"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2017.8240457"},{"key":"ref27","first-page":"327","article-title":"A 40GHz to 67GHz Bandwidth 23dB Gain 5.8dB Maximum NF mm-Wave LNA in 28nm CMOS","author":"hadipour","year":"2015","journal-title":"IEEE RFIC"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7417892"},{"key":"ref6","first-page":"92","article-title":"A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications","author":"pekarik","year":"2014","journal-title":"IEEE BCTM"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS48439.2020.9392971"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2015.7340566"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2567445"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2021.3053293"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2016.7751064"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.2981745"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2005.852226"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JRPROC.1944.232049"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2010.2073890"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/SIRF.2016.7445453"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2696944"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2019.8701812"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3062032"}],"event":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2021,12,5]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2021,12,8]]}},"container-title":["2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9682201\/9682202\/09682483.pdf?arnumber=9682483","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T16:58:02Z","timestamp":1652201882000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9682483\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,12,5]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/bcicts50416.2021.9682483","relation":{},"subject":[],"published":{"date-parts":[[2021,12,5]]}}}