{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,10,5]],"date-time":"2023-10-05T09:11:52Z","timestamp":1696497112865},"reference-count":70,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"},{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100000780","name":"European Commission (EC) through Horizon 2020 Research and Innovation Program","doi-asserted-by":"publisher","award":["829005"],"id":[{"id":"10.13039\/501100000780","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3119898","type":"journal-article","created":{"date-parts":[[2021,10,15]],"date-time":"2021-10-15T09:32:29Z","timestamp":1634290349000},"page":"141121-141130","source":"Crossref","is-referenced-by-count":1,"title":["High-Throughput Investigation of the Electron Transport Properties in Si\u2081-\u2093<\/i>Ge\u2093<\/i>Alloys"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"http:\/\/orcid.org\/0000-0002-2097-6612","authenticated-orcid":false,"given":"Bamidele Ibrahim","family":"Adetunji","sequence":"first","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-9043-1597","authenticated-orcid":false,"given":"Andrew","family":"Supka","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-6527-8511","authenticated-orcid":false,"given":"Marco","family":"Fornari","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-0244-7717","authenticated-orcid":false,"given":"Arrigo","family":"Calzolari","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1063\/1.2773532"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.41.7892"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.55.645"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.103.125201"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.74.195208"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1063\/1.365657"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/aa8f79"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2040577"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.61.7877"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.888628"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3697(73)90050-4"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1038\/srep22098"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1139\/v92-063"},{"key":"ref63","doi-asserted-by":"crossref","DOI":"10.1007\/978-3-642-10586-9","volume":"165","author":"jacoboni","year":"2010","journal-title":"Theory of Electron Transport in Semiconductors A Pathway from Elementary Physics to Nonequilibrium Green Functions"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.2360144"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/18\/25\/255201"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/5.0009838"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/16.155887"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.900417"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.245201"},{"key":"ref67","first-page":"149","author":"schaffler","year":"2001","journal-title":"Properties of advanced semiconductor materials GaN AIN InN BN SiC SiGe"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.4.3460"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.9.4219"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.9.627"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.2.3197"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-020-0276-2"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1038\/s41578-020-00262-z"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-018-0105-z"},{"key":"ref24","article-title":"Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology","author":"bellentani","year":"2021","journal-title":"arXiv 2106 04940"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2880303"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.48.14276"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.363052"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1063\/1.2073976"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.64.165205"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.88.165127"},{"key":"ref58","year":"1982","journal-title":"Band 17 Halbleiter"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.3390\/cryst9120624"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-48933-9_21"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.59.12872"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.56.1400"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.64.125308"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.3139\/146.101545"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3072879"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3031246"},{"key":"ref40","article-title":"Projector augmented wave method with spin-orbit coupling: Applications to simple solids and zincblende-type semiconductors","volume":"86","author":"corso","year":"2012","journal-title":"Phys Rev B Condens Matter"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ASMC49169.2020.9185252"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.3023953"},{"key":"ref14","first-page":"1","article-title":"Multi-bit cryogenic flash memory on Si\/SiGe and Ge\/GeSi heterostructures","author":"hou","year":"2021","journal-title":"Proc IEEE Int Sym VLSI Tech Syst and Appl (VLSI-TSA)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.4763476"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4870392"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.5010933"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/24\/49\/492204"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2018.12.050"},{"key":"ref4","first-page":"1","article-title":"A brief review of source\/drain engineering in CMOS technology and future outlook","author":"liu","year":"2020","journal-title":"Proc IEEE 15th Int Conf Solid-State Integr Circuit Technol (ICSICT)"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.93533"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"75r","DOI":"10.1088\/0268-1242\/19\/10\/R02","article-title":"Si\/SiGe heterostructures: From material and physics to devices and circuits","volume":"19","author":"paul","year":"2004","journal-title":"Semicond Sci Technol"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-09897-4_22"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1819976"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/NEMS.2006.334658"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.50.15026"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838029"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2017.03.055"},{"key":"ref45","article-title":"Two-layer high-throughput: Effective mass calculations including warping","author":"supka","year":"0","journal-title":"Engineering"},{"key":"ref48","article-title":"Final technical report on investigation of germanium–silicon alloys","author":"wang","year":"1955"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1021\/j100792a049"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2017.11.034"},{"key":"ref41","author":"grosso","year":"2000","journal-title":"Solid State Physics"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.89.155131"},{"key":"ref43","article-title":"Accurate ab initio tight-binding Hamiltonians: Effective tools for electronic transport and optical spectroscopy from first principles","volume":"94","author":"d\u2019amico","year":"2016","journal-title":"Phys Rev B Condens Matter"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09570357.pdf?arnumber=9570357","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,1,12]],"date-time":"2023-01-12T10:15:32Z","timestamp":1673518532000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9570357\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":70,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3119898","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}