{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T17:42:53Z","timestamp":1694626973014},"reference-count":11,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[1998,1,1]],"date-time":"1998-01-01T00:00:00Z","timestamp":883612800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Solid-State Circuits"],"published-print":{"date-parts":[[1998]]},"DOI":"10.1109\/4.711341","type":"journal-article","created":{"date-parts":[[2002,8,24]],"date-time":"2002-08-24T20:00:39Z","timestamp":1030219239000},"page":"1417-1422","source":"Crossref","is-referenced-by-count":20,"title":["Design of RF integrated circuits using SiGe bipolar technology"],"prefix":"10.1109","volume":"33","author":[{"given":"R.","family":"Gotzfried","sequence":"first","affiliation":[]},{"given":"F.","family":"Beisswanger","sequence":"additional","affiliation":[]},{"given":"S.","family":"Gerlach","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","first-page":"739","article-title":"sige base bipolar technology with 74 ghz $f_{\\max}$<\/tex><\/formula> and 11 ps gate delay","author":"meister","year":"1995","journal-title":"Tech Dig"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1993.347393"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/75.242219"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/4.508274"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.1996.511024"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/GAAS.1993.394502"},{"key":"ref8","first-page":"1179","article-title":"bonding pad models for silicon vlsi technologies and their effects on the noise figure of rf npn's","author":"camilleri","year":"1994","journal-title":"Proc MTT Symp"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/4.545818"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/BIPOL.1996.554626"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/75.535839"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/16.535346"}],"container-title":["IEEE Journal of Solid-State Circuits"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx4\/4\/15419\/00711341.pdf?arnumber=711341","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:07:15Z","timestamp":1638216435000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/711341\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998]]},"references-count":11,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/4.711341","relation":{},"ISSN":["0018-9200"],"issn-type":[{"value":"0018-9200","type":"print"}],"subject":[],"published":{"date-parts":[[1998]]}}}