乐胖代购免代理版

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,5,10]],"date-time":"2024-05-10T15:36:26Z","timestamp":1715355386417},"reference-count":48,"publisher":"Institution of Engineering and Technology (IET)","issue":"5","license":[{"start":{"date-parts":[[2021,2,28]],"date-time":"2021-02-28T00:00:00Z","timestamp":1614470400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2021,2,28]],"date-time":"2021-02-28T00:00:00Z","timestamp":1614470400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IET Circuits, Devices & Syst"],"published-print":{"date-parts":[[2021,8]]},"DOI":"10.1049\/cds2.12037","type":"journal-article","created":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T04:53:52Z","timestamp":1614574432000},"page":"424-433","source":"Crossref","is-referenced-by-count":5,"title":["Interface trap charges associated reliability analysis of Si\/Ge heterojunction dopingless TFET"],"prefix":"10.1049","volume":"15","author":[{"given":"Suruchi","family":"Sharma","sequence":"first","affiliation":[{"name":"Department of Electronics and Communication Engineering National Institute of Technology Delhi Delhi India"}]},{"given":"Rikmantra","family":"Basu","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering National Institute of Technology Delhi Delhi India"}]},{"given":"Baljit","family":"Kaur","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering National Institute of Technology Delhi Delhi India"}]}],"member":"265","published-online":{"date-parts":[[2021,2,28]]},"reference":[{"key":"e_1_2_5_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.02.002"},{"key":"e_1_2_5_3_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1178606"},{"key":"e_1_2_5_4_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0924-4247(98)00142-3"},{"key":"e_1_2_5_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"e_1_2_5_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2898328"},{"key":"e_1_2_5_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2754297"},{"key":"e_1_2_5_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2670603"},{"key":"e_1_2_5_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2861943"},{"key":"e_1_2_5_10_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2757593"},{"key":"e_1_2_5_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2276888"},{"key":"e_1_2_5_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.899389"},{"issue":"3","key":"e_1_2_5_13_1","first-page":"265","article-title":"High dielectric constant oxides. EPJ","volume":"28","author":"Robertson J.","year":"2004","journal-title":"Appl. Phys."},{"key":"e_1_2_5_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2283517"},{"key":"e_1_2_5_15_1","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/4\/12\/001"},{"key":"e_1_2_5_16_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(97)00194-7"},{"key":"e_1_2_5_17_1","doi-asserted-by":"publisher","DOI":"10.4218\/etrij.05.0205.0031"},{"key":"e_1_2_5_18_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.04.009"},{"key":"e_1_2_5_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2258157"},{"issue":"2","key":"e_1_2_5_20_1","first-page":"741","article-title":"New degradation mechanisms and reliability performance in tunneling field effect transistors","author":"Jiao G.F.","year":"2009","journal-title":"Tech. Dig. \u2013Int. Electron Device. Meet. IEDM"},{"key":"e_1_2_5_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2564448"},{"key":"e_1_2_5_22_1","doi-asserted-by":"publisher","DOI":"10.1007\/s12633-019-00189-3"},{"key":"e_1_2_5_23_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2019.111043"},{"key":"e_1_2_5_24_1","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2019.0290"},{"key":"e_1_2_5_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2006864"},{"key":"e_1_2_5_26_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2600621"},{"key":"e_1_2_5_27_1","volume-title":"Hafnium\u2010based High\u2010\u03ba Gate Dielectrics","author":"Huang A.P."},{"key":"e_1_2_5_28_1","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2019.0230"},{"key":"e_1_2_5_29_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2008.02.134"},{"key":"e_1_2_5_30_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2092777"},{"key":"e_1_2_5_31_1","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(88)90007-X"},{"key":"e_1_2_5_32_1","volume-title":"Silvaco","author":"\u2018ATLAS user's manual","year":"2016"},{"key":"e_1_2_5_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045731"},{"key":"e_1_2_5_34_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2184763"},{"key":"e_1_2_5_35_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2253752"},{"key":"e_1_2_5_36_1","doi-asserted-by":"publisher","DOI":"10.1088\/1468-6996\/15\/2\/024601"},{"key":"e_1_2_5_37_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2487563"},{"key":"e_1_2_5_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4813841"},{"key":"e_1_2_5_39_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.851824"},{"key":"e_1_2_5_40_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mattod.2014.04.026"},{"key":"e_1_2_5_41_1","doi-asserted-by":"publisher","DOI":"10.1049\/mnl.2019.0252"},{"key":"e_1_2_5_42_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2653620"},{"key":"e_1_2_5_43_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2181178"},{"key":"e_1_2_5_44_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2028907"},{"key":"e_1_2_5_45_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2047240"},{"key":"e_1_2_5_46_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2167335"},{"key":"e_1_2_5_47_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2916975"},{"key":"e_1_2_5_48_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2219537"},{"key":"e_1_2_5_49_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.998598"}],"container-title":["IET Circuits, Devices & Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1049\/cds2.12037","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1049\/cds2.12037","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1049\/cds2.12037","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,10,17]],"date-time":"2022-10-17T11:33:10Z","timestamp":1666006390000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1049\/cds2.12037"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,2,28]]},"references-count":48,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2021,8]]}},"alternative-id":["10.1049\/cds2.12037"],"URL":"https:\/\/doi.org\/10.1049\/cds2.12037","archive":["Portico"],"relation":{},"ISSN":["1751-858X","1751-8598"],"issn-type":[{"value":"1751-858X","type":"print"},{"value":"1751-8598","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,2,28]]}}}