{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,12,5]],"date-time":"2024-12-05T05:15:16Z","timestamp":1733375716910,"version":"3.30.1"},"reference-count":20,"publisher":"Elsevier BV","issue":"8","license":[{"start":{"date-parts":[[2001,8,1]],"date-time":"2001-08-01T00:00:00Z","timestamp":996624000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2001,8]]},"DOI":"10.1016\/s0026-2714(01)00085-3","type":"journal-article","created":{"date-parts":[[2002,10,31]],"date-time":"2002-10-31T19:50:07Z","timestamp":1036093807000},"page":"1129-1135","source":"Crossref","is-referenced-by-count":5,"title":["RF modeling approach to determining end-of-life reliability for InP-based HBTs"],"prefix":"10.1016","volume":"41","author":[{"given":"S","family":"Thomas III","sequence":"first","affiliation":[]},{"given":"C.H","family":"Fields","sequence":"additional","affiliation":[]},{"given":"M","family":"Madhav","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/S0026-2714(01)00085-3_BIB1","doi-asserted-by":"crossref","first-page":"954","DOI":"10.1007\/s11664-998-0127-y","volume":"27","author":"Kopf","year":"1998","journal-title":"J Electron Mater"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB2","doi-asserted-by":"crossref","first-page":"303","DOI":"10.1109\/55.704407","volume":"19","author":"Kurishima","year":"1998","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB3","doi-asserted-by":"crossref","first-page":"115","DOI":"10.1109\/55.663532","volume":"19","author":"Pan","year":"1998","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB4","doi-asserted-by":"crossref","unstructured":"Kiziloglu K, Thomas III S, Williams Jr F, Paine BM. Proc Int Conf Indium Phosphide Related Mater, 2000. p. 294\u201397","DOI":"10.1109\/ICIPRM.2000.850290"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB5","doi-asserted-by":"crossref","first-page":"332","DOI":"10.1109\/55.847371","volume":"21","author":"Bahl","year":"2000","journal-title":"IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB6","unstructured":"Kiziloglu K, Thomas III S, Paine BM, Williams Jr F, Fields CH. Proc Electrochem Soc, SOTAPOCS XXX, 1999. p. 95\u2013102"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB7","unstructured":"Aucoin L, Benedek M, Cobb M, Kelley G. Proc Int Conf GaAs Manufact Technol, 1997. p. 42\u20135"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB8","unstructured":"Henderson TS, Kim TS. Proc GaAs IC Symp, 1996. p. 27\u201330"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB9","unstructured":"Henderson T. Proc IEDM, 1995. p. 811\u20134"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB10","unstructured":"Bahl SR, Camnitz LH, Houng D, Mierzwinski M, Turner J, Lefforge D. Proc IEDM, 1995. p. 815\u20138"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB11","unstructured":"Takahashi T, Sasa S, Kawano A, Iwai T, Fujii T. Proc IEDM, 1994. p. 191\u20134"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB12","doi-asserted-by":"crossref","first-page":"471","DOI":"10.1109\/55.116921","volume":"12","author":"Streit","year":"1991","journal-title":"Trans LT IEEE Electron Dev Lett"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB13","unstructured":"Low TS, Hutchinson CP, Canfield PC, Shirley TS, Yeats RE, Chang JSC, Essilfe GK, Culver MK, Whiteley WC, D'Avanzo DC, Pan N, Elliott J, Lutz C. Proc GaAs IC Symp, 1998. p. 153\u20136"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB14","doi-asserted-by":"crossref","first-page":"2216","DOI":"10.1116\/1.588903","volume":"14","author":"Streit","year":"1996","journal-title":"J Vac Sci Technol B"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB15","doi-asserted-by":"crossref","first-page":"2178","DOI":"10.1109\/16.249462","volume":"40","author":"Hafizi","year":"1993","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB16","doi-asserted-by":"crossref","first-page":"1591","DOI":"10.1016\/S0038-1101(97)00111-1","volume":"41","author":"Hafizi","year":"1997","journal-title":"Solid-State Electron"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB17","unstructured":"Thomas III S, Fields CH, Sokolich M, Kiziloglu K, Chow D. Proc IPRM, 2000. p. 286\u20139"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB18","doi-asserted-by":"crossref","first-page":"2235","DOI":"10.1109\/16.158793","volume":"39","author":"Dawson","year":"1992","journal-title":"IEEE Trans Electron Dev"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB19","unstructured":"Paine BM, Thomas III S, Delaney MJ. Int Reliab Phys Symp, Orlando, FL, April\/May 2001 [to be presented]"},{"key":"10.1016\/S0026-2714(01)00085-3_BIB20","doi-asserted-by":"crossref","first-page":"2092","DOI":"10.1116\/1.588082","volume":"13","author":"Wakita","year":"1995","journal-title":"J Vac Sci Technol B"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000853?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271401000853?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,12,4]],"date-time":"2024-12-04T06:57:16Z","timestamp":1733295436000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271401000853"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,8]]},"references-count":20,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2001,8]]}},"alternative-id":["S0026271401000853"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2714(01)00085-3","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2001,8]]}}}