{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T05:01:00Z","timestamp":1740114060318,"version":"3.37.3"},"reference-count":36,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2017,12,1]],"date-time":"2017-12-01T00:00:00Z","timestamp":1512086400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"funder":[{"DOI":"10.13039\/501100003549","name":"Hungarian Scientific Research Fund","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003549","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003549","name":"Hungarian Scientific Research Fund","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003549","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2017,12]]},"DOI":"10.1016\/j.microrel.2017.03.027","type":"journal-article","created":{"date-parts":[[2017,4,7]],"date-time":"2017-04-07T19:51:00Z","timestamp":1491594660000},"page":"387-394","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":9,"special_numbering":"C","title":["Thermoelectrical modelling and simulation of devices based on VO2"],"prefix":"10.1016","volume":"79","author":[{"given":"L\u00e1szl\u00f3","family":"Pohl","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2842-4070","authenticated-orcid":false,"given":"Soma","family":"Ur","sequence":"additional","affiliation":[]},{"given":"J\u00e1nos","family":"Mizsei","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"4","key":"10.1016\/j.microrel.2017.03.027_bb0005","doi-asserted-by":"crossref","first-page":"38","DOI":"10.1109\/MSPEC.2015.7065416","article-title":"The law that's not a law","volume":"52","author":"Moore","year":"2015","journal-title":"IEEE Spectr."},{"key":"10.1016\/j.microrel.2017.03.027_bb0010","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1109\/JXCDC.2015.2418033","article-title":"Benchmarking of beyond-CMOS exploratory devices for logic integrated circuits","volume":"1","author":"Nikonov","year":"2015","journal-title":"IEEE J. Explor. Solid State Comput. Devices Circuits"},{"key":"10.1016\/j.microrel.2017.03.027_bb0015","series-title":"Proc. THERMINIC 2013","first-page":"344","article-title":"Thermal-electronic integrated logic","volume":"25\u201327","author":"Mizsei","year":"2013"},{"key":"10.1016\/j.microrel.2017.03.027_bb0020","doi-asserted-by":"crossref","first-page":"4383","DOI":"10.1103\/PhysRevB.11.4383","volume":"11","author":"Zylbersztejn","year":"1975","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.microrel.2017.03.027_bb0025","doi-asserted-by":"crossref","first-page":"89","DOI":"10.1126\/science.1088386","article-title":"Universality and critical behavior at the Mott transition","volume":"302","author":"Limelette","year":"2003","journal-title":"Science"},{"issue":"5857","key":"10.1016\/j.microrel.2017.03.027_bb0030","doi-asserted-by":"crossref","first-page":"1750","DOI":"10.1126\/science.1150124","article-title":"Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging","volume":"318","author":"Qazilbash","year":"2007","journal-title":"Science"},{"key":"10.1016\/j.microrel.2017.03.027_bb0035","doi-asserted-by":"crossref","first-page":"194","DOI":"10.1116\/1.1492608","article-title":"Structural and electrical properties of vanadium dioxide thin films","volume":"5","author":"Rozgonyi","year":"1968","journal-title":"J. Vac. Sci. Technol."},{"key":"10.1016\/j.microrel.2017.03.027_bb0040","doi-asserted-by":"crossref","first-page":"535","DOI":"10.1038\/nature13865","article-title":"Metallization of vanadium dioxide driven by large phonon entropy","volume":"515","author":"Budai","year":"2014","journal-title":"Nature"},{"key":"10.1016\/j.microrel.2017.03.027_bb0045","doi-asserted-by":"crossref","first-page":"266401","DOI":"10.1103\/PhysRevLett.97.266401","article-title":"Monoclinic and correlated metal phase in VO2 as evidence of the Mott transition: coherent phonon analysis","volume":"97","author":"Kim","year":"2006","journal-title":"Phys. Rev. Lett."},{"issue":"19","key":"10.1016\/j.microrel.2017.03.027_bb0050","doi-asserted-by":"crossref","first-page":"2782","DOI":"10.1364\/AO.30.002782","article-title":"Optical properties of vanadium dioxide and vanadium pentoxide thin films","volume":"30","author":"Chain","year":"1991","journal-title":"Appl. Opt."},{"issue":"8","key":"10.1016\/j.microrel.2017.03.027_bb0055","doi-asserted-by":"crossref","first-page":"1289","DOI":"10.1109\/JPROC.2015.2431914","article-title":"Mott memory and neuromorphic devices","volume":"103","author":"Zhou","year":"2015","journal-title":"Proc. IEEE"},{"key":"10.1016\/j.microrel.2017.03.027_bb0060","series-title":"Proc. DAC","first-page":"1","article-title":"Neuro inspired computing with coupled relaxation oscillators","author":"Datta","year":"2014"},{"key":"10.1016\/j.microrel.2017.03.027_bb0065","doi-asserted-by":"crossref","first-page":"3536","DOI":"10.1002\/adma.201101731","article-title":"Self-heating and external strain coupling induced phase transition of VO2 nanobeam as single domain switch","volume":"23","author":"Hu","year":"2011","journal-title":"Adv. Mater."},{"key":"10.1016\/j.microrel.2017.03.027_bb0070","doi-asserted-by":"crossref","first-page":"612","DOI":"10.1116\/1.2186661","article-title":"Thermochromic vanadium dioxide smart coatings grown on Kapton substrates by reactive pulsed laser deposition","volume":"24","author":"Soltania","year":"2006","journal-title":"J. Vac. Sci. Technol. A"},{"key":"10.1016\/j.microrel.2017.03.027_bb0075","series-title":"Materials Today: Proceedings","first-page":"4272","article-title":"The Phonsistor \u2013 a novel vo2 based nanoscale thermal-electronic device and its application in thermal-electronic logic circuits (telc)","volume":"2 (8)","author":"Mizsei","year":"2015"},{"key":"10.1016\/j.microrel.2017.03.027_bb0080","series-title":"Proc. THERMINIC'16","first-page":"307","article-title":"Modelling of the thermoelectrical performance of devices based on VO2","volume":"21\u201323","author":"Ur","year":"2016"},{"key":"10.1016\/j.microrel.2017.03.027_bb0085","doi-asserted-by":"crossref","first-page":"5345","DOI":"10.1007\/s10853-009-3442-7","article-title":"On the triggering mechanism for the metal\u2013insulator transition in thin film VO2 devices: electric field versus thermal effects","volume":"44","author":"Gopalakrishnan","year":"2009","journal-title":"J. Mater. Sci."},{"key":"10.1016\/j.microrel.2017.03.027_bb0090","doi-asserted-by":"crossref","first-page":"6128","DOI":"10.1002\/adma.201302046","article-title":"Local temperature redistribution and structural transition during Joule-heating-driven conductance switching in VO2","volume":"25","author":"Kumar","year":"2013","journal-title":"Adv. Mater."},{"key":"10.1016\/j.microrel.2017.03.027_bb0095","series-title":"Proc. 3rd THERMINIC Workshop","first-page":"84","article-title":"SUNRED: a new thermal simulator and typical applications","volume":"21\u201323","author":"Sz\u00e9kely","year":"1997"},{"key":"10.1016\/j.microrel.2017.03.027_bb0100","series-title":"Proc. THERMINIC'11","first-page":"195","article-title":"Extension of the SUNRED algorithm for electrothermal simulation and its application in failure analysis of large area (organic) semiconductor devices","author":"Pohl","year":"2011"},{"issue":"11","key":"10.1016\/j.microrel.2017.03.027_bb0105","doi-asserted-by":"crossref","first-page":"1011","DOI":"10.1016\/j.mejo.2012.05.015","article-title":"Nonlinear electro-thermal modeling and field-simulation of OLEDs for lighting applications II: luminosity and failure analysis","volume":"44","author":"Koh\u00e1ri","year":"2015","journal-title":"Microelectron. J."},{"issue":"1","key":"10.1016\/j.microrel.2017.03.027_bb0110","doi-asserted-by":"crossref","first-page":"73","DOI":"10.1007\/s10832-008-9433-2","article-title":"Electrical and optical properties of metal-insulator-transition VO2 thin films","volume":"22","author":"Lappalainen","year":"2009","journal-title":"J. Electroceram."},{"issue":"12","key":"10.1016\/j.microrel.2017.03.027_bb0115","doi-asserted-by":"crossref","first-page":"2935","DOI":"10.1021\/nl062316w","article-title":"Local electron heating in nanoscale conductors","volume":"6","author":"D'Agosta","year":"2006","journal-title":"Nano Lett."},{"issue":"2","key":"10.1016\/j.microrel.2017.03.027_bb0120","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1166\/jctn.2008.2454","article-title":"Spectral phonon transport properties of silicon based on molecular dynamics simulations and lattice dynamics","volume":"5","author":"Henry","year":"2008","journal-title":"J. Comput. Theor. Nanosci."},{"issue":"1","key":"10.1016\/j.microrel.2017.03.027_bb0125","doi-asserted-by":"crossref","first-page":"306","DOI":"10.1109\/TMTT.2004.839916","article-title":"Accurate determination of thermal resistance of FETs","volume":"53","author":"Darwish","year":"2005","journal-title":"IEEE Trans. Microw. Theory Tech."},{"issue":"12","key":"10.1016\/j.microrel.2017.03.027_bb0130","doi-asserted-by":"crossref","first-page":"2796","DOI":"10.1109\/16.974706","article-title":"On the modeling of the transient thermal behavior of semiconductor devices","volume":"48","author":"Rinaldi","year":"2001","journal-title":"IEEE Trans. Electron Devices"},{"issue":"26","key":"10.1016\/j.microrel.2017.03.027_bb0135","doi-asserted-by":"crossref","first-page":"256804","DOI":"10.1103\/PhysRevLett.101.256804","article-title":"Avalanche-induced current enhancement in semiconducting carbon nanotubes","volume":"101","author":"Liao","year":"2008","journal-title":"Phys. Rev. Lett."},{"issue":"20","key":"10.1016\/j.microrel.2017.03.027_bb0140","doi-asserted-by":"crossref","first-page":"205118","DOI":"10.1103\/PhysRevB.74.205118","article-title":"Correlated metallic state of vanadium dioxide","volume":"74","author":"Qazilbash","year":"2006","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.microrel.2017.03.027_bb0145","series-title":"Thermodynamics of Thermoelectricity","isbn-type":"print","first-page":"275","author":"Goupil","year":"2011","ISBN":"https:\/\/id.crossref.org\/isbn\/9789533075440"},{"issue":"12A","key":"10.1016\/j.microrel.2017.03.027_bb0150","doi-asserted-by":"crossref","first-page":"1114","DOI":"10.1016\/j.mejo.2015.06.025","article-title":"Advancing the thermal stability of 3D ICs using logi-thermal simulation","volume":"46","author":"Nagy","year":"2015","journal-title":"Microelectron. J."},{"key":"10.1016\/j.microrel.2017.03.027_bb0155","doi-asserted-by":"crossref","first-page":"624","DOI":"10.1016\/j.mejo.2011.06.011","article-title":"Nonlinear electro-thermal modeling and field-simulation of OLEDs for lighting applications I: Algorithmic fundamentals","volume":"43","author":"Pohl","year":"2012","journal-title":"Microelectron. J."},{"key":"10.1016\/j.microrel.2017.03.027_bb0160","series-title":"Magnetic Hysteresis","isbn-type":"print","author":"Della Torre","year":"2000","ISBN":"https:\/\/id.crossref.org\/isbn\/9780780360419"},{"issue":"2","key":"10.1016\/j.microrel.2017.03.027_bb0165","doi-asserted-by":"crossref","first-page":"161","DOI":"10.1007\/s11831-009-9031-8","article-title":"The hysteresis Bouc-wen model, a survey","volume":"16","author":"Ismail","year":"2009","journal-title":"Arch. Comput. Meth. Eng."},{"issue":"9","key":"10.1016\/j.microrel.2017.03.027_bb0170","doi-asserted-by":"crossref","first-page":"4718","DOI":"10.1063\/1.1145314","article-title":"Analytical model for the approximation of hysteresis loop and its application to the scanning tunneling microscope","volume":"66","author":"Lapshin","year":"1995","journal-title":"Rev. Sci. Instrum."},{"issue":"2","key":"10.1016\/j.microrel.2017.03.027_bb0175","doi-asserted-by":"crossref","DOI":"10.1109\/20.825802","article-title":"Macroscopic models of magnetization","volume":"36","author":"Liorzou","year":"2000","journal-title":"IEEE Trans. Magn."},{"key":"10.1016\/j.microrel.2017.03.027_bb0180","series-title":"Proc. 38th ISSE","first-page":"61","article-title":"Thermal-electronic devices and thermal-electronic logic circuits (TELC)","volume":"6\u201310","author":"Mizsei","year":"2015"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300781?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300781?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2021,4,5]],"date-time":"2021-04-05T10:37:12Z","timestamp":1617619032000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271417300781"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,12]]},"references-count":36,"alternative-id":["S0026271417300781"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.027","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2017,12]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Thermoelectrical modelling and simulation of devices based on VO2","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.027","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2017 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}