乐胖代购免代理版

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,3]],"date-time":"2024-09-03T15:44:18Z","timestamp":1725378258572},"reference-count":16,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2017,12,1]],"date-time":"2017-12-01T00:00:00Z","timestamp":1512086400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2017,12]]},"DOI":"10.1016\/j.microrel.2017.03.014","type":"journal-article","created":{"date-parts":[[2017,3,22]],"date-time":"2017-03-22T01:33:24Z","timestamp":1490146404000},"page":"201-205","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":11,"special_numbering":"C","title":["ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications"],"prefix":"10.1016","volume":"79","author":[{"given":"Aihua","family":"Dong","sequence":"first","affiliation":[]},{"given":"Javier A.","family":"Salcedo","sequence":"additional","affiliation":[]},{"given":"Srivatsan","family":"Parthasarathy","sequence":"additional","affiliation":[]},{"given":"Yuanzhong","family":"Zhou","sequence":"additional","affiliation":[]},{"given":"Sirui","family":"Luo","sequence":"additional","affiliation":[]},{"given":"Jean-Jacques","family":"Hajjar","sequence":"additional","affiliation":[]},{"given":"Juin J.","family":"Liou","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"2","key":"10.1016\/j.microrel.2017.03.014_bb0005","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1109\/TDMR.2011.2106129","article-title":"Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies","volume":"11","author":"Ker","year":"2011","journal-title":"IEEE Trans. Device Mater. Reliab."},{"issue":"2","key":"10.1016\/j.microrel.2017.03.014_bb0010","doi-asserted-by":"crossref","first-page":"298","DOI":"10.1109\/TMTT.2008.2011158","article-title":"Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection","volume":"57","author":"Huang","year":"2009","journal-title":"IEEE Transactions on Microwave Theory and Techniques"},{"issue":"11","key":"10.1016\/j.microrel.2017.03.014_bb0015","doi-asserted-by":"crossref","first-page":"3747","DOI":"10.1109\/TMTT.2015.2478000","article-title":"Generic electrostatic discharges protection solutions for RF and millimeter-wave applications","volume":"63","author":"Lim","year":"2015","journal-title":"IEEE Transactions on Microwave Theory and Techniques"},{"key":"10.1016\/j.microrel.2017.03.014_bb0020","series-title":"A Low Leakage Poly-gated SCR Device for ESD Protection in 65nm CMOS Process","author":"Parthasarathy","year":"2013"},{"issue":"7","key":"10.1016\/j.microrel.2017.03.014_bb0025","doi-asserted-by":"crossref","first-page":"1304","DOI":"10.1109\/TED.2005.850652","article-title":"A review on RF ESD protection design","volume":"52","author":"Wang","year":"2005","journal-title":"IEEE Transactions on Electron Devices"},{"key":"10.1016\/j.microrel.2017.03.014_bb0030","first-page":"1202","article-title":"On-chip ESD protection for RF I\/Os: devices, circuits and models","volume":"2","author":"Rosenbaum","year":"2005","journal-title":"IEEE International Symposium on Circuits and Systems"},{"issue":"2","key":"10.1016\/j.microrel.2017.03.014_bb0035","doi-asserted-by":"crossref","first-page":"241","DOI":"10.1109\/TEMC.2012.2216271","article-title":"Low-capacitance SCR structure for RF I\/O application","volume":"55","author":"Dong","year":"2013","journal-title":"IEEE Trans. Electromagn. Compat."},{"key":"10.1016\/j.microrel.2017.03.014_bb0040","article-title":"Monolithic ESD protection for distributed high speed applications in 28-nm CMOS technology","author":"Salcedo","year":"2014","journal-title":"IEEE International Reliability Physics Symposium"},{"issue":"2","key":"10.1016\/j.microrel.2017.03.014_bb0045","doi-asserted-by":"crossref","first-page":"178","DOI":"10.1109\/LED.2012.2233708","article-title":"High-robustness and low-capacitance silicon-controlled rectifier for high-speed I\/O ESD protection","volume":"34","author":"Cui","year":"2013","journal-title":"IEEE Electron Device Letters"},{"issue":"2","key":"10.1016\/j.microrel.2017.03.014_bb0050","doi-asserted-by":"crossref","first-page":"775","DOI":"10.1109\/TDMR.2014.2311130","article-title":"Optimization on layout style of diode stackup for on-Chip ESD protection","volume":"14","author":"Lin","year":"2014","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.microrel.2017.03.014_bb0055","doi-asserted-by":"crossref","first-page":"142","DOI":"10.1016\/j.sse.2013.08.002","article-title":"Improvement on diode string structure for 65-nm RF ESD protection","volume":"89","author":"Ma","year":"2013","journal-title":"Solid State Electron."},{"key":"10.1016\/j.microrel.2017.03.014_bb0060","series-title":"Improving ESD Robustness of Stacked Diodes With Embedded SCR for RF Applications in 65-nm CMOS","first-page":"EL.1.1","author":"Lin","year":"2014"},{"issue":"5","key":"10.1016\/j.microrel.2017.03.014_bb0065","doi-asserted-by":"crossref","first-page":"424","DOI":"10.1109\/LED.2015.2413844","article-title":"Silicon-controlled rectifier for electrostatic discharge protection solutions with minimal snapback and reduced overshoot voltage","volume":"36","author":"Sun","year":"2015","journal-title":"IEEE Electron Device Letters"},{"key":"10.1016\/j.microrel.2017.03.014_bb0070","series-title":"White Paper 1: A Case for Lowering Component Level HBM\/MM ESD Specifications and Requirements","author":"Industry Council on ESD Targets","year":"2008"},{"issue":"10","key":"10.1016\/j.microrel.2017.03.014_bb0075","doi-asserted-by":"crossref","first-page":"2736","DOI":"10.1109\/TED.2010.2063032","article-title":"Evaluation of transient behavior of polysilicon-bound diode for fast ESD applications","volume":"57","author":"Li","year":"2010","journal-title":"IEEE Transactions on Electron Devices"},{"issue":"4","key":"10.1016\/j.microrel.2017.03.014_bb0080","doi-asserted-by":"crossref","first-page":"814","DOI":"10.1109\/TED.2009.2039964","article-title":"Investigation of LOCOS- and polysilicon-bound diodes for robust electrostatic discharge (ESD) applications","volume":"57","author":"Li","year":"2010","journal-title":"IEEE Transactions on Electron Devices"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300586?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300586?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2018,9,3]],"date-time":"2018-09-03T05:27:01Z","timestamp":1535952421000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271417300586"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,12]]},"references-count":16,"alternative-id":["S0026271417300586"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.014","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2017,12]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.014","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2017 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}