{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,6]],"date-time":"2024-10-06T00:42:21Z","timestamp":1728175341158},"reference-count":22,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2013,1,1]],"date-time":"2013-01-01T00:00:00Z","timestamp":1356998400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2013,1]]},"DOI":"10.1016\/j.microrel.2012.06.140","type":"journal-article","created":{"date-parts":[[2012,7,30]],"date-time":"2012-07-30T20:30:53Z","timestamp":1343680253000},"page":"70-78","source":"Crossref","is-referenced-by-count":67,"title":["Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test"],"prefix":"10.1016","volume":"53","author":[{"given":"Xi","family":"Liu","sequence":"first","affiliation":[]},{"given":"Qiao","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Venkatesh","family":"Sundaram","sequence":"additional","affiliation":[]},{"given":"Rao R.","family":"Tummala","sequence":"additional","affiliation":[]},{"given":"Suresh K.","family":"Sitaraman","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2012.06.140_b0005","doi-asserted-by":"crossref","first-page":"8","DOI":"10.1108\/13565361111127304","article-title":"Overview and outlook of through-silicon via (TSV) and 3D integrations","volume":"28","author":"Lau","year":"2011","journal-title":"Microelectron Int"},{"key":"10.1016\/j.microrel.2012.06.140_b0010","doi-asserted-by":"crossref","first-page":"43","DOI":"10.1109\/JPROC.2008.2007462","article-title":"Through-silicon via (TSV)","volume":"97","author":"Motoyoshi","year":"2009","journal-title":"Proc IEEE"},{"key":"10.1016\/j.microrel.2012.06.140_b0015","doi-asserted-by":"crossref","first-page":"H981","DOI":"10.1149\/1.2994154","article-title":"Numerical and experimental investigation of thermomechanical deformation in high-aspect-ratio electroplated through-silicon vias","volume":"155","author":"Dixit","year":"2008","journal-title":"J Electrochem Soc"},{"key":"10.1016\/j.microrel.2012.06.140_b0020","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1109\/JPROC.2008.2007463","article-title":"High-density through-silicon vias for 3-D LSIs","volume":"97","author":"Koyanagi","year":"2009","journal-title":"Proc IEEE"},{"key":"10.1016\/j.microrel.2012.06.140_b0025","doi-asserted-by":"crossref","first-page":"530","DOI":"10.1016\/j.microrel.2011.10.016","article-title":"Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits","volume":"52","author":"Budiman","year":"2012","journal-title":"Microelectron Reliab"},{"key":"10.1016\/j.microrel.2012.06.140_b0030","doi-asserted-by":"crossref","first-page":"1856","DOI":"10.1016\/j.microrel.2011.06.003","article-title":"Cu pumping in TSVs: effect of pre-CMP thermal budget","volume":"51","author":"De Wolf","year":"2011","journal-title":"Microelectron Reliab"},{"key":"10.1016\/j.microrel.2012.06.140_b0035","doi-asserted-by":"crossref","unstructured":"Jung MG, Liu X, Sitaraman SK, Pan DZ, Lim SK. Full-chip through-silicon-via interfacial crack analysis and optimization for 3D IC. In: 2011 IEEE\/Acm international conference on computer-aided design (Iccad) 2011; p. 563\u201370.","DOI":"10.1109\/ICCAD.2011.6105386"},{"key":"10.1016\/j.microrel.2012.06.140_b0040","doi-asserted-by":"crossref","first-page":"1614","DOI":"10.1016\/j.tsf.2009.07.151","article-title":"Reliability study of through-silicon via (TSV) copper filled interconnects","volume":"518","author":"Kamto","year":"2009","journal-title":"Thin Solid Films"},{"key":"10.1016\/j.microrel.2012.06.140_b0045","doi-asserted-by":"crossref","first-page":"322","DOI":"10.1007\/s11664-011-1726-6","article-title":"Interfacial effects during thermal cycling of Cu-filled through-silicon vias (TSV)","volume":"41","author":"Kumar","year":"2012","journal-title":"J Electron Mater"},{"key":"10.1016\/j.microrel.2012.06.140_b0050","unstructured":"Liu X, Chen Q, Dixit P, Chatterjee R, Tummala RR, Sitaraman SK. Failure mechanisms and optimum design for electroplated copper through-silicon vias (TSV). In: 2009 59th Electronic components and technology conference, ECTC 2009, May 26, 2009\u2013May 29, 2009, San Diego, CA, United states; 2009. p. 624\u201329."},{"key":"10.1016\/j.microrel.2012.06.140_b0055","doi-asserted-by":"crossref","unstructured":"Lu KH, Ryu S-K, Zhao Q, Hummler K, Im J, Huang R, Ho PS. Temperature-dependent thermal stress determination for through-silicon-vias (TSVs) by combining bending beam technique with finite element analysis. In: 2011 61st Electronic components and technology conference, ECTC 2011, May 31, 2011\u2013June 3, 2011, Lake Buena Vista, FL, United states; 2011. p. 1475\u2013480.","DOI":"10.1109\/ECTC.2011.5898705"},{"key":"10.1016\/j.microrel.2012.06.140_b0060","doi-asserted-by":"crossref","first-page":"720","DOI":"10.1109\/TADVP.2009.2021661","article-title":"Nonlinear thermal stress\/strain analyses of copper filled TSV (Through-Silicon Via) and their flip\u2013chip microbumps","volume":"32","author":"Selvanayagam","year":"2009","journal-title":"IEEE Trans Adv Packag"},{"key":"10.1016\/j.microrel.2012.06.140_b0065","first-page":"67","article-title":"Thermo-mechanical reliability of 3D-integrated microstructures in stacked silicon","volume":"970","author":"Wunderle","year":"2007","journal-title":"Enabling Technol 3-D Integr"},{"key":"10.1016\/j.microrel.2012.06.140_b0070","doi-asserted-by":"crossref","first-page":"517","DOI":"10.1016\/j.microrel.2010.09.031","article-title":"Reliability challenges in 3D IC packaging technology","volume":"51","author":"Tu","year":"2011","journal-title":"Microelectron Reliab"},{"key":"10.1016\/j.microrel.2012.06.140_b0075","doi-asserted-by":"crossref","unstructured":"Amagai M, Suzuki Y. TSV stress testing and modeling. In: 2010 Proceedings 60th electronic components and technology conference (Ectc); 2010. p. 1273-280.","DOI":"10.1109\/ECTC.2010.5490650"},{"key":"10.1016\/j.microrel.2012.06.140_b0080","doi-asserted-by":"crossref","first-page":"1365","DOI":"10.1016\/S0026-2714(99)00059-1","article-title":"Characterization of chip scale packaging materials","volume":"39","author":"Amagai","year":"1999","journal-title":"Microelectron Reliab"},{"key":"10.1016\/j.microrel.2012.06.140_b0085","unstructured":"Iannuzzelli R. Predicting Plated-through-Hole Reliability in High-Temperature Manufacturing Processes. In: 1991 Proceedings: 41st electronic components & technology conference. 1991; p. 410\u201321."},{"key":"10.1016\/j.microrel.2012.06.140_b0090","author":"Anderson","year":"2004","journal-title":"Fract Mech: Fundamentals Appl"},{"key":"10.1016\/j.microrel.2012.06.140_b0095","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1115\/1.1648061","article-title":"Research of underfill delamination in flip chip by the J-integral method","volume":"126","author":"Xu","year":"2004","journal-title":"J Electron Packag"},{"key":"10.1016\/j.microrel.2012.06.140_b0100","series-title":"Numerical methods for engineers: with programming and software applications","author":"Chapra","year":"1998"},{"key":"10.1016\/j.microrel.2012.06.140_b0105","doi-asserted-by":"crossref","first-page":"931","DOI":"10.1016\/0013-7944(77)90013-3","article-title":"Finite-element calculation of stress intensity factors by a modified crack closure integral","volume":"9","author":"Rybicki","year":"1977","journal-title":"Eng Fract Mech"},{"key":"10.1016\/j.microrel.2012.06.140_b0110","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1016\/S0040-6090(96)08551-3","article-title":"Measurements of the debond energy for thin metallization lines on dielectrics","volume":"286","author":"Bagchi","year":"1996","journal-title":"Thin Solid Films"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627141200337X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627141200337X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,7,2]],"date-time":"2019-07-02T05:01:37Z","timestamp":1562043697000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002627141200337X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,1]]},"references-count":22,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2013,1]]}},"alternative-id":["S002627141200337X"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2012.06.140","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2013,1]]}}}