{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,16]],"date-time":"2024-09-16T14:50:41Z","timestamp":1726498241185},"reference-count":12,"publisher":"Elsevier BV","issue":"9-11","license":[{"start":{"date-parts":[[2011,9,1]],"date-time":"2011-09-01T00:00:00Z","timestamp":1314835200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2011,9]]},"DOI":"10.1016\/j.microrel.2011.07.073","type":"journal-article","created":{"date-parts":[[2011,8,15]],"date-time":"2011-08-15T00:34:47Z","timestamp":1313368487000},"page":"1730-1735","source":"Crossref","is-referenced-by-count":10,"title":["Reliability of submicron InGaAs\/InP DHBT under thermal and electrical stresses"],"prefix":"10.1016","volume":"51","author":[{"given":"G.A.","family":"Kon\u00e9","sequence":"first","affiliation":[]},{"given":"B.","family":"Grandchamp","sequence":"additional","affiliation":[]},{"given":"C.","family":"Hainaut","sequence":"additional","affiliation":[]},{"given":"F.","family":"Marc","sequence":"additional","affiliation":[]},{"given":"C.","family":"Maneux","sequence":"additional","affiliation":[]},{"given":"N.","family":"Labat","sequence":"additional","affiliation":[]},{"given":"T.","family":"Zimmer","sequence":"additional","affiliation":[]},{"given":"V.","family":"Nodjiadjim","sequence":"additional","affiliation":[]},{"given":"M.","family":"Riet","sequence":"additional","affiliation":[]},{"given":"J.","family":"Godin","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"3","key":"10.1016\/j.microrel.2011.07.073_b0005","doi-asserted-by":"crossref","first-page":"43","DOI":"10.1002\/bltj.20387","article-title":"InP DHBT circuits: from device physics to 40Gb\/s and 100Gb\/s transmission system experiments","volume":"14","author":"Weimann","year":"2009","journal-title":"Bell Labs Techn J"},{"doi-asserted-by":"crossref","unstructured":"Godin J, Nodjiadjim V, Riet M, Berdaguer P, Drisse O, Derouin E, et al. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs. In: CSICS, 2008.","key":"10.1016\/j.microrel.2011.07.073_b0010","DOI":"10.1109\/CSICS.2008.28"},{"issue":"9\u201311","key":"10.1016\/j.microrel.2011.07.073_b0015","doi-asserted-by":"crossref","first-page":"1548","DOI":"10.1016\/j.microrel.2010.07.141","article-title":"Preliminary results of storage accelerated aging test on InGaAs\/InP DHBT","volume":"50","author":"Kon\u00e9","year":"2010","journal-title":"Microelectron Reliab"},{"unstructured":"Sulima P-Y, Zimmer T, Beckrich H, Battaglia J-L, Fregonese S, Celi D. A transient measurement setup for electro-thermal characterisation for SiGe HBTs. In: MixDes \u2013 conference on mixed design of integrated circuits and systems, Szczecin, Krakow, 25 June 2005. p. 22.","key":"10.1016\/j.microrel.2011.07.073_b0020"},{"doi-asserted-by":"crossref","unstructured":"Grandchamp B, Maneux C, Labat N, Touboul A, Bove Ph, Riet M, et al. Study of failure mechanisms in InP\/GaAsSb\/InP DHBT under bias and thermal stress. In: 19th IPRM conference proceedings, Matsue, Japan, May 2007.","key":"10.1016\/j.microrel.2011.07.073_b0025","DOI":"10.1109\/ICIPRM.2007.381212"},{"issue":"99","key":"10.1016\/j.microrel.2011.07.073_b0030","article-title":"Trends in submicrometer InP-based HBT architecture targeting thermal management","author":"Grandchamp","year":"2011","journal-title":"IEEE Trans Electron Dev"},{"doi-asserted-by":"crossref","unstructured":"Fukai YK, Kurishima K, Kashio N, Yamahata S. Reliability study on InP\/InGaAs emitter\u2013base junction for high speed and low power InP HBT. In: IPRM 2010, Japan, 2010.","key":"10.1016\/j.microrel.2011.07.073_b0035","DOI":"10.1109\/ICIPRM.2010.5515966"},{"key":"10.1016\/j.microrel.2011.07.073_b0040","doi-asserted-by":"crossref","DOI":"10.1016\/j.microrel.2011.07.045","article-title":"Investigation of the degradation mechanisms of InP\/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design","author":"Ghosh","year":"2011","journal-title":"Microelectron Reliab"},{"unstructured":"Feng KT, Runshing L, Canfield P, Wanming S. Reliability of InGaP\/GaAs HBT\u2019s under high current acceleration. In: GaAs IC symposium, 23rd annual technical digest, 2001. p. 273\u20136.","key":"10.1016\/j.microrel.2011.07.073_b0045"},{"issue":"4","key":"10.1016\/j.microrel.2011.07.073_b0050","first-page":"589","article-title":"Highly reliable InP-based HBTs with a ledge structure operating at high current density","volume":"90","author":"Fukai","year":"2007","journal-title":"Electron Commun Jpn Part 2"},{"unstructured":"Feng K, Yang Y, Nguyen C. Reliability of Commercial InGaP\/GaAs HBTs under High Voltage Operation. In: IEEE GaAs Digest; 2003. p. 71\u20133.","key":"10.1016\/j.microrel.2011.07.073_b0055"},{"unstructured":"Liou JJ. Long-term base current instability: a major concern for AlGaAs\/GaAs HBT reliability. In: Semiconductor conference, CAS \u201898 proceedings, vol. 1; 1998. p. 23\u201332.","key":"10.1016\/j.microrel.2011.07.073_b0060"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271411003386?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271411003386?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,6,13]],"date-time":"2019-06-13T22:07:12Z","timestamp":1560463632000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271411003386"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,9]]},"references-count":12,"journal-issue":{"issue":"9-11","published-print":{"date-parts":[[2011,9]]}},"alternative-id":["S0026271411003386"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2011.07.073","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2011,9]]}}}