{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,24]],"date-time":"2025-03-24T06:45:26Z","timestamp":1742798726702},"reference-count":14,"publisher":"Elsevier BV","issue":"5-6","license":[{"start":{"date-parts":[[2005,5,1]],"date-time":"2005-05-01T00:00:00Z","timestamp":1114905600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2005,5]]},"DOI":"10.1016\/j.microrel.2004.11.042","type":"journal-article","created":{"date-parts":[[2004,12,30]],"date-time":"2004-12-30T12:22:15Z","timestamp":1104409335000},"page":"811-814","source":"Crossref","is-referenced-by-count":12,"title":["Breakdown spots of ultra-thin (EOT<1.5nm) HfO2\/SiO2 stacks observed with enhanced\u2014CAFM"],"prefix":"10.1016","volume":"45","author":[{"given":"X.","family":"Blasco","sequence":"first","affiliation":[]},{"given":"M.","family":"Nafr\u0131\u0301a","sequence":"additional","affiliation":[]},{"given":"X.","family":"Aymerich","sequence":"additional","affiliation":[]},{"given":"J.","family":"P\u00e9try","sequence":"additional","affiliation":[]},{"given":"W.","family":"Vandervorst","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2004.11.042_bib1","doi-asserted-by":"crossref","first-page":"5243","DOI":"10.1063\/1.1361065","volume":"89","author":"Wilk","year":"2001","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2004.11.042_bib2","doi-asserted-by":"crossref","first-page":"97","DOI":"10.1109\/55.981318","volume":"23","author":"Zhu","year":"2002","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2004.11.042_bib3","doi-asserted-by":"crossref","first-page":"3269","DOI":"10.1063\/1.1326482","volume":"77","author":"Qi","year":"2000","journal-title":"App. Phys. Lett."},{"key":"10.1016\/j.microrel.2004.11.042_bib4","doi-asserted-by":"crossref","first-page":"376","DOI":"10.1063\/1.1492024","volume":"81","author":"Yu","year":"2002","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2004.11.042_bib5","doi-asserted-by":"crossref","first-page":"484","DOI":"10.1063\/1.371888","volume":"87","author":"Wilk","year":"2000","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2004.11.042_bib6","first-page":"521","volume":"02","author":"Kauerauf","year":"2002","journal-title":"IEDM"},{"key":"10.1016\/j.microrel.2004.11.042_bib7","first-page":"380","author":"Porti","year":"2002","journal-title":"Proc of IRPS"},{"key":"10.1016\/j.microrel.2004.11.042_bib8","doi-asserted-by":"crossref","first-page":"1945","DOI":"10.1116\/1.588113","volume":"12","author":"O\u2019Shea","year":"1995","journal-title":"J. Vac. Sci. Technol. B"},{"key":"10.1016\/j.microrel.2004.11.042_bib9","first-page":"163","author":"Olbrich","year":"1998","journal-title":"Proc. IRPS"},{"key":"10.1016\/j.microrel.2004.11.042_bib10","doi-asserted-by":"crossref","first-page":"2071","DOI":"10.1063\/1.1430542","volume":"91","author":"Porti","year":"2002","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2004.11.042_bib11","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1016\/j.mee.2003.12.035","volume":"72","author":"Blasco","year":"2004","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.microrel.2004.11.042_bib12","doi-asserted-by":"crossref","first-page":"37","DOI":"10.1016\/S0026-2714(97)00206-0","volume":"38","author":"Martin","year":"1998","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2004.11.042_bib13","doi-asserted-by":"crossref","first-page":"933","DOI":"10.1109\/TED.2003.812082","volume":"50","author":"Porti","year":"2003","journal-title":"IEEE Trans. Elec. Dev."},{"key":"10.1016\/j.microrel.2004.11.042_bib14","doi-asserted-by":"crossref","first-page":"3615","DOI":"10.1063\/1.1519357","volume":"81","author":"Porti","year":"2002","journal-title":"Appl. Phys. Lett."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271404004561?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271404004561?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,1,30]],"date-time":"2019-01-30T13:57:37Z","timestamp":1548856657000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271404004561"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2005,5]]},"references-count":14,"journal-issue":{"issue":"5-6","published-print":{"date-parts":[[2005,5]]}},"alternative-id":["S0026271404004561"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2004.11.042","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2005,5]]}}}