乐胖代购免代理版

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T18:14:13Z","timestamp":1649009653226},"reference-count":24,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2004,1,1]],"date-time":"2004-01-01T00:00:00Z","timestamp":1072915200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2004,1]]},"DOI":"10.1016\/j.microrel.2003.09.005","type":"journal-article","created":{"date-parts":[[2003,12,5]],"date-time":"2003-12-05T11:42:11Z","timestamp":1070624531000},"page":"25-32","source":"Crossref","is-referenced-by-count":3,"title":["Influence of mobility model on extraction of stress dependent source\u2013drain series resistance"],"prefix":"10.1016","volume":"44","author":[{"given":"M.M.","family":"De Souza","sequence":"first","affiliation":[]},{"given":"S.K.","family":"Manhas","sequence":"additional","affiliation":[]},{"given":"D.","family":"Chandra Sekhar","sequence":"additional","affiliation":[]},{"given":"A.S.","family":"Oates","sequence":"additional","affiliation":[]},{"given":"P.","family":"Chaparala","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2003.09.005_BIB1","doi-asserted-by":"crossref","first-page":"149","DOI":"10.1109\/16.658824","article-title":"A unified model for the self-limiting hot carrier degradation in LDD n-MOSFETs","volume":"45","author":"Ang","year":"1998","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB2","doi-asserted-by":"crossref","first-page":"1114","DOI":"10.1109\/16.502423","article-title":"Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs","volume":"43","author":"Raychoudhuri","year":"1996","journal-title":"TED"},{"key":"10.1016\/j.microrel.2003.09.005_BIB3","doi-asserted-by":"crossref","first-page":"499","DOI":"10.1109\/55.338416","article-title":"Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFETs","volume":"15","author":"Pan","year":"1994","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB4","doi-asserted-by":"crossref","first-page":"957","DOI":"10.1109\/16.381994","article-title":"Two-stage hot carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction","volume":"42","author":"Chan","year":"1995","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB5","doi-asserted-by":"crossref","first-page":"1063","DOI":"10.1016\/S0026-2714(98)00112-7","article-title":"Precise quantitative evaluation of hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs","volume":"38","author":"Walter","year":"1998","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2003.09.005_BIB6","doi-asserted-by":"crossref","first-page":"1317","DOI":"10.1109\/16.678559","article-title":"A novel single-device DC method for extraction of effective mobility and source\u2013drain resistances of fresh and hot-carrier degraded drain-engineered MOSFETs","volume":"45","author":"Lou","year":"1998","journal-title":"IEEE Trans. Electron Dev."},{"issue":"2","key":"10.1016\/j.microrel.2003.09.005_BIB7","doi-asserted-by":"crossref","first-page":"169","DOI":"10.1016\/S0026-2714(00)00210-9","article-title":"A comparison of early stage hot carrier degradation behaviour in 5 V and 3 V submicron low doped drain metal oxide semiconductor field effect transistors","volume":"44","author":"De Souza","year":"2001","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2003.09.005_BIB8","article-title":"Characterisation of the electron mobility in the inverted \u3008100\u3009 Si surface","volume":"18","author":"Sabnis","year":"1979","journal-title":"IEDM Tech. Dig."},{"key":"10.1016\/j.microrel.2003.09.005_BIB9","doi-asserted-by":"crossref","first-page":"953","DOI":"10.1143\/JJAP.18.953","article-title":"A new method to determine effective MOSFET channel length","volume":"18","author":"Terada","year":"1979","journal-title":"Japanese Journal of Appl. Physics"},{"key":"10.1016\/j.microrel.2003.09.005_BIB10","doi-asserted-by":"crossref","first-page":"170","DOI":"10.1109\/EDL.1980.25276","article-title":"A new method to determine MOSFET channel length","volume":"1","author":"Chern","year":"1980","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB11","doi-asserted-by":"crossref","first-page":"2469","DOI":"10.1109\/T-ED.1987.23337","article-title":"Gate voltage dependent effective channel length and series resistance of LDD MOSFETs","volume":"34","author":"Hu","year":"1987","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB12","unstructured":"Taur Y, Zicherman DS, Lombardi DR, Restle PJ, Hsu CH, Hanafi Hi, et al. \u201cA New Shift and Ratio\u201d method for MOSFET channel length extraction. 1986;EDL-1:170"},{"key":"10.1016\/j.microrel.2003.09.005_BIB13","doi-asserted-by":"crossref","first-page":"1846","DOI":"10.1109\/T-ED.1980.20116","article-title":"Experimental derivation of the source and drain resistance of MOS transistors","volume":"27","author":"Succiu","year":"1980","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB14","doi-asserted-by":"crossref","first-page":"10","DOI":"10.1109\/EDL.1982.25456","article-title":"Measurement of MOSFET constants","volume":"3","author":"De La Moneda","year":"1982","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB15","doi-asserted-by":"crossref","first-page":"145","DOI":"10.1109\/55.485195","article-title":"An accurate semi-empirical saturation drain current model for LDD n-MOSFET","volume":"17","author":"Chen","year":"1996","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB16","series-title":"Fundamentals of modern VLSI devices","author":"Taur","year":"1998"},{"key":"10.1016\/j.microrel.2003.09.005_BIB17","doi-asserted-by":"crossref","first-page":"1497","DOI":"10.1109\/T-ED.1980.20063","article-title":"Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces","volume":"27","author":"Sun","year":"1980","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB18","doi-asserted-by":"crossref","first-page":"329","DOI":"10.1109\/EDL.1983.25751","article-title":"Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFETs","volume":"4","author":"Takeda","year":"1983","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB19","doi-asserted-by":"crossref","first-page":"2221","DOI":"10.1109\/16.8796","article-title":"Lateral distribution of hot-carrier-induced interface taps in MOSFETs","volume":"35","author":"Ancona","year":"1988","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB20","doi-asserted-by":"crossref","first-page":"171","DOI":"10.1109\/16.817583","article-title":"A comprehensive study of hot-carrier induced interface and oxide trap distribution in MOSFETs using a novel charge pumping technique","volume":"47","author":"Mahapatra","year":"2000","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB21","doi-asserted-by":"crossref","first-page":"50","DOI":"10.1109\/EDL.1984.25829","article-title":"Relationship between MOSFET degradation and hot-electron-induced interface-sate generation","volume":"5","author":"Hsu","year":"1984","journal-title":"IEEE Electron Dev. Lett."},{"key":"10.1016\/j.microrel.2003.09.005_BIB22","doi-asserted-by":"crossref","first-page":"441","DOI":"10.1109\/16.556154","article-title":"The threshold-voltage model of MOSFET devices with localized interface charge","volume":"44","author":"Jean","year":"1997","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2003.09.005_BIB23","doi-asserted-by":"crossref","unstructured":"MEDICI, 2D device simulator, Avanti, 2000","DOI":"10.1016\/S0294-3506(00)90105-4"},{"key":"10.1016\/j.microrel.2003.09.005_BIB24","unstructured":"Manhas SK, Oates AS, De Souza MM. A new extraction methodology for series resistance and mobility degradation of hot carrier stressed NMOSFETs. IEEE TDMR, submitted for publication"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403004062?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271403004062?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2020,3,27]],"date-time":"2020-03-27T18:17:17Z","timestamp":1585333037000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271403004062"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2004,1]]},"references-count":24,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2004,1]]}},"alternative-id":["S0026271403004062"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2003.09.005","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2004,1]]}}}