{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,22]],"date-time":"2025-03-22T12:12:57Z","timestamp":1742645577562},"reference-count":29,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1016\/j.mejo.2023.105776","type":"journal-article","created":{"date-parts":[[2023,4,10]],"date-time":"2023-04-10T18:41:47Z","timestamp":1681152107000},"page":"105776","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":7,"special_numbering":"C","title":["Noise and linearity analysis of recessed-source\/drain junctionless Gate All Around (Re-S\/D-JL-GAA) MOSFETs for communication systems"],"prefix":"10.1016","volume":"136","author":[{"ORCID":"http:\/\/orcid.org\/0000-0001-8786-2292","authenticated-orcid":false,"given":"Alok","family":"Kumar","sequence":"first","affiliation":[]},{"given":"Tarun Kumar","family":"Gupta","sequence":"additional","affiliation":[]},{"given":"Bhavana P.","family":"Shrivastava","sequence":"additional","affiliation":[]},{"given":"Abhinav","family":"Gupta","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2023.105776_b1","series-title":"2013 IEEE International Wireless Symposium","first-page":"1","article-title":"Compact modeling of multi-gate MOSFETs for RF designs","author":"Chen","year":"2013"},{"key":"10.1016\/j.mejo.2023.105776_b2","doi-asserted-by":"crossref","DOI":"10.1016\/j.microrel.2021.114445","article-title":"Impact of multi-finger MOSFET geometry on the electrical performance of RF circuits","volume":"129","author":"Saad","year":"2022","journal-title":"Microelectron. Reliab."},{"issue":"11","key":"10.1016\/j.mejo.2023.105776_b3","doi-asserted-by":"crossref","first-page":"2665","DOI":"10.1007\/s00542-015-2554-z","article-title":"Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour","volume":"22","author":"Kumar","year":"2016","journal-title":"Microsyst. Technol."},{"issue":"6","key":"10.1016\/j.mejo.2023.105776_b4","doi-asserted-by":"crossref","first-page":"2989","DOI":"10.1007\/s12633-021-01084-6","article-title":"A novel approach to model threshold voltage and subthreshold current of graded-doped junctionless-gate-all-around (GD-JL-GAA) MOSFETs","volume":"14","author":"Gupta","year":"2022","journal-title":"Silicon"},{"issue":"10","key":"10.1016\/j.mejo.2023.105776_b5","doi-asserted-by":"crossref","first-page":"5495","DOI":"10.1007\/s12633-021-01327-6","article-title":"Modeling of threshold voltage and subthreshold current of junctionless channel-modulated dual-material double-gate (JL-CM-DMDG) MOSFETs","volume":"14","author":"Awasthi","year":"2022","journal-title":"Silicon"},{"issue":"9","key":"10.1016\/j.mejo.2023.105776_b6","doi-asserted-by":"crossref","first-page":"4423","DOI":"10.1007\/s12633-021-01181-6","article-title":"Comparative analysis & study of various leakage reduction techniques for short channel devices in junctionless transistors: A review and perspective","volume":"14","author":"Rai","year":"2022","journal-title":"Silicon"},{"issue":"9","key":"10.1016\/j.mejo.2023.105776_b7","doi-asserted-by":"crossref","first-page":"2284","DOI":"10.1109\/TED.2012.2202119","article-title":"A quasi-two-dimensional threshold voltage model for short-channel junctionless double-gate MOSFETs","volume":"59","author":"Chiang","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2023.105776_b8","doi-asserted-by":"crossref","DOI":"10.1016\/j.compeleceng.2022.107914","article-title":"Impact of interface trap charges on the performances of junctionless MOSFET in sub-threshold regime","volume":"100","author":"Ganguli","year":"2022","journal-title":"Comput. Electr. Eng."},{"key":"10.1016\/j.mejo.2023.105776_b9","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2022.105540","article-title":"Investigation and optimization of electro-thermal performance of double gate-all-around MOSFET","volume":"129","author":"Zhang","year":"2022","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2023.105776_b10","doi-asserted-by":"crossref","first-page":"24","DOI":"10.1016\/j.sse.2017.02.004","article-title":"A compact explicit DC model for short channel gate-all-around junctionless MOSFETs","volume":"131","author":"Lime","year":"2017","journal-title":"Solid-State Electron."},{"issue":"11","key":"10.1016\/j.mejo.2023.105776_b11","doi-asserted-by":"crossref","first-page":"6391","DOI":"10.1007\/s12633-021-01397-6","article-title":"Study of analog\/rf and stability investigation of surrounded gate junctionless graded channel MOSFET (SJLGC MOSFET)","volume":"14","author":"Misra","year":"2022","journal-title":"Silicon"},{"key":"10.1016\/j.mejo.2023.105776_b12","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2022.105490","article-title":"Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness","volume":"126","author":"Kumar","year":"2022","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2023.105776_b13","series-title":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","first-page":"80","article-title":"DC and analog\/RF performance comparison of renovated GAA jlfet structures","author":"Ghosh","year":"2022"},{"issue":"1","key":"10.1016\/j.mejo.2023.105776_b14","doi-asserted-by":"crossref","first-page":"1","DOI":"10.21272\/jnep.14(1).01008","article-title":"Performance estimation of recessed modified junctionless multigate transistor","volume":"14","author":"Selvi","year":"2022","journal-title":"J. Nano-Electron. Phys."},{"issue":"11","key":"10.1016\/j.mejo.2023.105776_b15","doi-asserted-by":"crossref","first-page":"740","DOI":"10.1109\/LED.2004.837582","article-title":"Self-align recessed source drain ultrathin body SOI MOSFET","volume":"25","author":"Zhang","year":"2004","journal-title":"IEEE Electron Device Lett."},{"issue":"5","key":"10.1016\/j.mejo.2023.105776_b16","doi-asserted-by":"crossref","first-page":"540","DOI":"10.1016\/j.sse.2009.03.002","article-title":"Analytical models of front-and back-gate potential distribution and threshold voltage for recessed source\/drain UTB SOI MOSFETs","volume":"53","author":"Svili\u010di\u0107","year":"2009","journal-title":"Solid-State Electron."},{"key":"10.1016\/j.mejo.2023.105776_b17","article-title":"Impact of temperature variation on noise parameters and HCI degradation of recessed source\/drain junctionless gate all around MOSFETs","author":"Kumar","year":"2023","journal-title":"Microelectron. J."},{"issue":"5\u20136","key":"10.1016\/j.mejo.2023.105776_b18","doi-asserted-by":"crossref","first-page":"822","DOI":"10.1002\/jnm.1938","article-title":"Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation","volume":"27","author":"Chen","year":"2014","journal-title":"Int. J. Numer. Modelling, Electron. Netw. Devices Fields"},{"issue":"8","key":"10.1016\/j.mejo.2023.105776_b19","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s00339-016-0239-9","article-title":"Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers","volume":"122","author":"Gupta","year":"2016","journal-title":"Appl. Phys. A"},{"issue":"11","key":"10.1016\/j.mejo.2023.105776_b20","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s00339-020-04092-2","article-title":"Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications","volume":"126","author":"Kumar","year":"2020","journal-title":"Appl. Phys. A"},{"issue":"12","key":"10.1016\/j.mejo.2023.105776_b21","doi-asserted-by":"crossref","first-page":"3263","DOI":"10.1109\/TED.2012.2219537","article-title":"An investigation of linearity performance and intermodulation distortion of GME CGT MOSFET for RFIC design","volume":"59","author":"Ghosh","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"issue":"9","key":"10.1016\/j.mejo.2023.105776_b22","doi-asserted-by":"crossref","first-page":"3113","DOI":"10.1007\/s12633-020-00669-x","article-title":"Linear distortion analysis of 3D double gate junctionless transistor with high-k dielectrics and gate metals","volume":"13","author":"Baidya","year":"2021","journal-title":"Silicon"},{"year":"2018","series-title":"ATLAS user\u2019s manual","key":"10.1016\/j.mejo.2023.105776_b23"},{"issue":"22","key":"10.1016\/j.mejo.2023.105776_b24","doi-asserted-by":"crossref","DOI":"10.1063\/1.4904081","article-title":"Bandgap and optical absorption edge of GaAs1- xbix alloys with 0\u00a1 x\u00a1 17.8%","volume":"116","author":"Masnadi-Shirazi","year":"2014","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.mejo.2023.105776_b25","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1016\/j.matlet.2015.02.131","article-title":"Photoluminescence of gaasBi\/Gaas quantum dots grown by metalorganic vapor phase epitaxy","volume":"152","author":"Fitouri","year":"2015","journal-title":"Mater. Lett."},{"key":"10.1016\/j.mejo.2023.105776_b26","doi-asserted-by":"crossref","first-page":"253","DOI":"10.1016\/j.sse.2012.07.001","article-title":"A comparative study on hot carrier effects in inversion-mode and junctionless mugfets","volume":"79","author":"Lee","year":"2013","journal-title":"Solid-State Electron."},{"key":"10.1016\/j.mejo.2023.105776_b27","series-title":"Leakage current in sub-micrometer cmos gates","first-page":"1","author":"Butzen","year":"2006"},{"issue":"1","key":"10.1016\/j.mejo.2023.105776_b28","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1109\/LED.2005.860889","article-title":"The effect of gate leakage on the noise figure of algan\/gan hemts","volume":"27","author":"Sanabria","year":"2005","journal-title":"IEEE Electron Device Lett."},{"issue":"6","key":"10.1016\/j.mejo.2023.105776_b29","doi-asserted-by":"crossref","first-page":"2679","DOI":"10.1007\/s12633-021-01069-5","article-title":"Impact of temperature variation on analog, hot-carrier injection and linearity parameters of nanotube junctionless double-gate-all-around (NJL-DGAA) MOSFETs","volume":"14","author":"Kumar","year":"2022","journal-title":"Silicon"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269223000897?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269223000897?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,3]],"date-time":"2024-07-03T11:43:03Z","timestamp":1720006983000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269223000897"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6]]},"references-count":29,"alternative-id":["S0026269223000897"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2023.105776","relation":{},"ISSN":["1879-2391"],"issn-type":[{"type":"print","value":"1879-2391"}],"subject":[],"published":{"date-parts":[[2023,6]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Noise and linearity analysis of recessed-source\/drain junctionless Gate All Around (Re-S\/D-JL-GAA) MOSFETs for communication systems","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2023.105776","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2023 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}],"article-number":"105776"}}