{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,15]],"date-time":"2024-09-15T07:10:43Z","timestamp":1726384243188},"reference-count":26,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2023,4]]},"DOI":"10.1016\/j.mejo.2023.105720","type":"journal-article","created":{"date-parts":[[2023,2,14]],"date-time":"2023-02-14T17:45:34Z","timestamp":1676396734000},"page":"105720","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":11,"special_numbering":"C","title":["Impact of temperature variation on noise parameters and HCI degradation of Recessed Source\/Drain Junctionless Gate All Around MOSFETs"],"prefix":"10.1016","volume":"134","author":[{"ORCID":"http:\/\/orcid.org\/0000-0001-8786-2292","authenticated-orcid":false,"given":"Alok","family":"Kumar","sequence":"first","affiliation":[]},{"given":"Tarun Kumar","family":"Gupta","sequence":"additional","affiliation":[]},{"given":"Bhavana P.","family":"Shrivastava","sequence":"additional","affiliation":[]},{"given":"Abhinav","family":"Gupta","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2023.105720_b1","series-title":"NANO-CHIPS 2030: On-Chip AI for An Efficient Data-Driven World","article-title":"IRDS\u2014International roadmap for devices and systems, rebooting","volume":"Vol. 9","author":"Hoefflinger","year":"2020"},{"issue":"3","key":"10.1016\/j.mejo.2023.105720_b2","doi-asserted-by":"crossref","first-page":"93","DOI":"10.4313\/TEEM.2010.11.3.093","article-title":"Challenges for nanoscale MOSFETs and emerging nanoelectronics","volume":"11","author":"Kim","year":"2010","journal-title":"Trans. Electr. Electron. Mater."},{"issue":"5","key":"10.1016\/j.mejo.2023.105720_b3","doi-asserted-by":"crossref","DOI":"10.1063\/1.3079411","article-title":"Junctionless multigate field-effect transistor","volume":"94","author":"Lee","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2023.105720_b4","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2022.105501","article-title":"A physics-based drain current model for Si1-xGex source\/drain NT JLFET for enhanced hot carrier reliability with temperature measurement","volume":"126","author":"Thakur","year":"2022","journal-title":"Microelectron. J."},{"issue":"6","key":"10.1016\/j.mejo.2023.105720_b5","doi-asserted-by":"crossref","first-page":"2989","DOI":"10.1007\/s12633-021-01084-6","article-title":"A novel approach to model threshold voltage and subthreshold current of graded-doped junctionless-gate-all-around (GD-JL-GAA) MOSFETs","volume":"14","author":"Gupta","year":"2022","journal-title":"Silicon"},{"key":"10.1016\/j.mejo.2023.105720_b6","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2022.105490","article-title":"Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness","volume":"126","author":"Kumar","year":"2022","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2023.105720_b7","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2021.105214","article-title":"Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes","volume":"116","author":"Sreenivasulu","year":"2021","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2023.105720_b8","doi-asserted-by":"crossref","first-page":"24","DOI":"10.1016\/j.sse.2017.02.004","article-title":"A compact explicit DC model for short channel gate-all-around junctionless MOSFETs","volume":"131","author":"Lime","year":"2017","journal-title":"Solid-State Electron."},{"issue":"7","key":"10.1016\/j.mejo.2023.105720_b9","doi-asserted-by":"crossref","first-page":"2071","DOI":"10.1007\/s12633-020-00610-2","article-title":"Impact of temperature on analog\/RF performance of dielectric pocket gate-all-around (DPGAA) MOSFETs","volume":"13","author":"Awasthi","year":"2021","journal-title":"Silicon"},{"issue":"11","key":"10.1016\/j.mejo.2023.105720_b10","doi-asserted-by":"crossref","first-page":"740","DOI":"10.1109\/LED.2004.837582","article-title":"Self-align recessed source drain ultrathin body SOI MOSFET","volume":"25","author":"Zhang","year":"2004","journal-title":"IEEE Electron Device Lett."},{"issue":"5","key":"10.1016\/j.mejo.2023.105720_b11","doi-asserted-by":"crossref","first-page":"540","DOI":"10.1016\/j.sse.2009.03.002","article-title":"Analytical models of front-and back-gate potential distribution and threshold voltage for recessed source\/drain UTB SOI MOSFETs","volume":"53","author":"Svili\u010di\u0107","year":"2009","journal-title":"Solid-State Electron."},{"key":"10.1016\/j.mejo.2023.105720_b12","series-title":"Ultra thin film SOI MOSFET having recessed source\/drain structure and method of fabricating the same","author":"Ahn","year":"2006"},{"issue":"1","key":"10.1016\/j.mejo.2023.105720_b13","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1109\/LED.2005.860889","article-title":"The effect of gate leakage on the noise figure of AlGaN\/GaN HEMTs","volume":"27","author":"Sanabria","year":"2005","journal-title":"IEEE Electron Device Lett."},{"issue":"5\u20136","key":"10.1016\/j.mejo.2023.105720_b14","doi-asserted-by":"crossref","first-page":"822","DOI":"10.1002\/jnm.1938","article-title":"Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation","volume":"27","author":"Chen","year":"2014","journal-title":"Int. J. Numer. Modelling, Electron. Netw. Devices Fields"},{"issue":"8","key":"10.1016\/j.mejo.2023.105720_b15","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s00339-016-0239-9","article-title":"Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers","volume":"122","author":"Gupta","year":"2016","journal-title":"Appl. Phys. A"},{"key":"10.1016\/j.mejo.2023.105720_b16","doi-asserted-by":"crossref","first-page":"92","DOI":"10.1016\/j.spmi.2016.03.014","article-title":"Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study","volume":"93","author":"Pourian","year":"2016","journal-title":"Superlattices Microstruct."},{"issue":"11","key":"10.1016\/j.mejo.2023.105720_b17","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s00339-020-04092-2","article-title":"Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications","volume":"126","author":"Kumar","year":"2020","journal-title":"Appl. Phys. A"},{"key":"10.1016\/j.mejo.2023.105720_b18","series-title":"ATLAS user\u2019s manual","year":"2018"},{"issue":"22","key":"10.1016\/j.mejo.2023.105720_b19","doi-asserted-by":"crossref","DOI":"10.1063\/1.4904081","article-title":"Bandgap and optical absorption edge of GaAs1- xBix alloys with 0\u00a1 x\u00a1 17.8%","volume":"116","author":"Masnadi-Shirazi","year":"2014","journal-title":"J. Appl. Phys."},{"issue":"4","key":"10.1016\/j.mejo.2023.105720_b20","doi-asserted-by":"crossref","DOI":"10.1063\/1.3191675","article-title":"Composition dependence of photoluminescence of GaAs 1-x Bi x alloys","volume":"95","author":"Lu","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2023.105720_b21","doi-asserted-by":"crossref","first-page":"67","DOI":"10.1016\/j.optmat.2014.12.020","article-title":"Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys","volume":"42","author":"Fitouri","year":"2015","journal-title":"Opt. Mater."},{"issue":"9","key":"10.1016\/j.mejo.2023.105720_b22","doi-asserted-by":"crossref","DOI":"10.1063\/1.3690901","article-title":"Bi-induced p-type conductivity in nominally undoped Ga (AsBi)","volume":"100","author":"Pettinari","year":"2012","journal-title":"Appl. Phys. Lett."},{"issue":"6","key":"10.1016\/j.mejo.2023.105720_b23","doi-asserted-by":"crossref","first-page":"2679","DOI":"10.1007\/s12633-021-01069-5","article-title":"Impact of temperature variation on analog, hot-carrier injection and linearity parameters of nanotube junctionless double-gate-all-around (NJL-DGAA) MOSFETs","volume":"14","author":"Kumar","year":"2022","journal-title":"Silicon"},{"key":"10.1016\/j.mejo.2023.105720_b24","doi-asserted-by":"crossref","first-page":"253","DOI":"10.1016\/j.sse.2012.07.001","article-title":"A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs","volume":"79","author":"Lee","year":"2013","journal-title":"Solid-State Electron."},{"key":"10.1016\/j.mejo.2023.105720_b25","series-title":"Leakage Current in Sub-Micrometer Cmos Gates","first-page":"1","author":"Butzen","year":"2006"},{"issue":"7","key":"10.1016\/j.mejo.2023.105720_b26","doi-asserted-by":"crossref","DOI":"10.1063\/1.5043450","article-title":"An analytical model for terahertz detection in cylindrical surrounding-gate MOSFETs","volume":"8","author":"Ma","year":"2018","journal-title":"AIP Adv."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269223000332?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269223000332?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2023,3,11]],"date-time":"2023-03-11T19:03:41Z","timestamp":1678561421000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269223000332"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4]]},"references-count":26,"alternative-id":["S0026269223000332"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2023.105720","relation":{},"ISSN":["0026-2692"],"issn-type":[{"value":"0026-2692","type":"print"}],"subject":[],"published":{"date-parts":[[2023,4]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Impact of temperature variation on noise parameters and HCI degradation of Recessed Source\/Drain Junctionless Gate All Around MOSFETs","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2023.105720","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2023 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}],"article-number":"105720"}}