{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,12]],"date-time":"2024-07-12T17:15:50Z","timestamp":1720804550279},"reference-count":33,"publisher":"Elsevier BV","issue":"4","license":[{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2015,4,1]],"date-time":"2015-04-01T00:00:00Z","timestamp":1427846400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1016\/j.mejo.2015.02.003","type":"journal-article","created":{"date-parts":[[2015,3,3]],"date-time":"2015-03-03T01:00:19Z","timestamp":1425344419000},"page":"320-326","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":20,"title":["DC self-heating effects modelling in SOI and bulk FinFETs"],"prefix":"10.1016","volume":"46","author":[{"given":"B.","family":"Gonz\u00e1lez","sequence":"first","affiliation":[]},{"given":"J.B.","family":"Rold\u00e1n","sequence":"additional","affiliation":[]},{"given":"B.","family":"I\u00f1iguez","sequence":"additional","affiliation":[]},{"given":"A.","family":"L\u00e1zaro","sequence":"additional","affiliation":[]},{"given":"A.","family":"Cerdeira","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2015.02.003_bib1","series-title":"Semiconductor-on-Insulator Material for Nanoelectronics Applications","author":"Nazarov","year":"2011"},{"key":"10.1016\/j.mejo.2015.02.003_bib2","series-title":"FinFETs and Other Multi-Gate Transistors","author":"Colinge","year":"2008"},{"key":"10.1016\/j.mejo.2015.02.003_bib3","doi-asserted-by":"crossref","first-page":"937","DOI":"10.1016\/j.sse.2003.12.017","article-title":"Double gate silicon on insulator transistors. A Monte Carlo study","volume":"48","author":"G\u00e1miz","year":"2004","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib4","doi-asserted-by":"crossref","first-page":"816","DOI":"10.1109\/TVLSI.2008.2000455","article-title":"Electro-thermal analysis of multi-fin devices","volume":"16","author":"Swahn","year":"2008","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"10.1016\/j.mejo.2015.02.003_bib5","doi-asserted-by":"crossref","first-page":"1353","DOI":"10.1109\/TED.2012.2188296","article-title":"Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architectures","volume":"59","author":"Shrivastava","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib6","doi-asserted-by":"crossref","first-page":"1587","DOI":"10.1109\/JPROC.2006.879794","article-title":"Heat generation and transport in nanometer-scale transistors","volume":"94","author":"Pop","year":"2006","journal-title":"Proc. IEEE"},{"key":"10.1016\/j.mejo.2015.02.003_bib7","doi-asserted-by":"crossref","first-page":"11","DOI":"10.1016\/j.sse.2013.04.028","article-title":"Charge based DC compact modeling of bulk FinFET transistor","volume":"87","author":"Cerdeira","year":"2013","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib8","doi-asserted-by":"crossref","first-page":"165","DOI":"10.1016\/j.sse.2011.03.003","article-title":"Physics-based compact model for ultra-scaled FinFETs","volume":"62","author":"Yesayan","year":"2011","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib9","doi-asserted-by":"crossref","first-page":"1844","DOI":"10.1109\/TED.2013.2259174","article-title":"Time and frequency domain characterization of transistor self-heating","volume":"60","author":"Makovejev","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib10","unstructured":"S. Lee, R. Wachnik, P. Hyde, L. Wagner, J. Johnson, A. Chou, A. Kumar, S. Narasimha, T. Standaert, B. Greene, T. Yamashita, J. Johnson, K. Balakrishnan, H. Bu, S. Springer, G. Freeman, W. Henson, E. Nowak, Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices, in: Proceedings of the IEEE VLSI Technology, VLSIT, 2013, pp. 248\u2013249."},{"key":"10.1016\/j.mejo.2015.02.003_bib11","doi-asserted-by":"crossref","first-page":"1561","DOI":"10.1109\/TED.2013.2253465","article-title":"3D finite element Monte Carlo simulations of multigate nanoscale transistors","volume":"60","author":"Aldegunde","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib12","doi-asserted-by":"crossref","first-page":"423","DOI":"10.1109\/TED.2013.2296209","article-title":"Quantum corrections based on the 2D Schrodinger equation for 3D finite element Monte Carlo simulations of nanoscaled FinFETs","volume":"61","author":"Lindberg","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib13","unstructured":"Sentaurus DeviceTM User Guide, ver. G-2012.06, Synopsys Inc., Mountain View, CA."},{"key":"10.1016\/j.mejo.2015.02.003_bib14","doi-asserted-by":"crossref","first-page":"043122","DOI":"10.1063\/1.2840186","article-title":"High resolution vacuum scanning thermal microscopy of HfO2 and SiO2","volume":"92","author":"Hinz","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2015.02.003_bib15","doi-asserted-by":"crossref","first-page":"1989","DOI":"10.1109\/TED.2004.839752","article-title":"Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs","volume":"51","author":"Ha","year":"2004","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib16","doi-asserted-by":"crossref","first-page":"883","DOI":"10.1016\/j.mejo.2012.06.001","article-title":"Impact of dual-k spacer on analog performance of underlap FinFET","volume":"43","author":"Nandi","year":"2012","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2015.02.003_bib17","doi-asserted-by":"crossref","first-page":"86","DOI":"10.1016\/j.mee.2011.04.059","article-title":"Titanium nitride as electrode for MOS technology and Schottky diode: alternative extraction method of titanium nitride work function","volume":"92","author":"Lima","year":"2012","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.mejo.2015.02.003_bib18","doi-asserted-by":"crossref","first-page":"1269","DOI":"10.1109\/LED.2009.2032937","article-title":"Thermal properties of ultrathin hafnium oxide gate dielectric films","volume":"30","author":"Panzer","year":"2009","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2015.02.003_bib19","doi-asserted-by":"crossref","first-page":"88","DOI":"10.1016\/j.sse.2011.06.036","article-title":"Multi-subband ensemble Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond","volume":"65\u201366","author":"Sampedro","year":"2011","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib20","doi-asserted-by":"crossref","first-page":"136","DOI":"10.1109\/84.825788","article-title":"Process-dependent thin-film thermal conductivities for thermal CMOS MEMS","volume":"9","author":"von Arx","year":"2000","journal-title":"J. Microelectromech. Syst."},{"key":"10.1016\/j.mejo.2015.02.003_bib21","doi-asserted-by":"crossref","first-page":"1689","DOI":"10.1016\/S0038-1101(00)00096-4","article-title":"Electron transport in a model Si transistor","volume":"44","author":"Banoo","year":"2000","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib22","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1016\/j.sse.2012.07.017","article-title":"In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs","volume":"79","author":"Rold\u00e1n","year":"2013","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2015.02.003_bib23","doi-asserted-by":"crossref","first-page":"095014","DOI":"10.1088\/0268-1242\/26\/9\/095014","article-title":"Numerical dc self-heating in planar double-gate MOSFETs","volume":"26","author":"Gonz\u00e1lez","year":"2011","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/j.mejo.2015.02.003_bib24","doi-asserted-by":"crossref","unstructured":"F. Gamiz, L. Donetti, N. Rodriguez, Anisotropy of electron mobility in arbitrarily oriented FinFETs, in: Proceedings of the IEEE on Solid State Device Research Conference, ESSDERC, 2007, pp. 378\u2013381.","DOI":"10.1109\/ESSDERC.2007.4430957"},{"key":"10.1016\/j.mejo.2015.02.003_bib25","doi-asserted-by":"crossref","first-page":"2590","DOI":"10.1063\/1.363923","article-title":"Heat transport in thin dielectric films","volume":"81","author":"Lee","year":"1997","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.mejo.2015.02.003_bib26","unstructured":"X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor, C. Hu, Sub 50-nm FinFET: PMOS, in: Proceedings of the International Electron Device Meeting, IEDM, Technical Digest, 1999, pp. 67\u201370."},{"key":"10.1016\/j.mejo.2015.02.003_bib27","series-title":"Materials Science and Engineering Handbook","author":"Shackelford","year":"2001"},{"key":"10.1016\/j.mejo.2015.02.003_bib28","doi-asserted-by":"crossref","first-page":"1718","DOI":"10.1109\/TED.2007.899402","article-title":"Explicit analytical charge and capacitance models of undoped double-gate MOSFETs","volume":"54","author":"Moldovan","year":"2007","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib29","doi-asserted-by":"crossref","first-page":"2925","DOI":"10.1109\/TED.2010.2067217","article-title":"An analytical I\u2013V model for surrounding-gate transistors that includes quantum and velocity overshoot effects","volume":"57","author":"Rold\u00e1n","year":"2010","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib30","doi-asserted-by":"crossref","first-page":"095015","DOI":"10.1088\/0268-1242\/26\/9\/095015","article-title":"Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs","volume":"26","author":"Cheralathan","year":"2011","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/j.mejo.2015.02.003_bib31","doi-asserted-by":"crossref","unstructured":"M. Cheralathan, C. Sampedro, F. G\u00e1miz, B. I\u00f1iguez, Analytical drain current model using temperature dependence model in nanoscale double-gate (DG) MOSFETs, in: Proceedings of the IEEE on Ultimate Integration on Silicon, ULIS, 2013, pp. 141\u2013144.","DOI":"10.1109\/ULIS.2013.6523503"},{"key":"10.1016\/j.mejo.2015.02.003_bib32","doi-asserted-by":"crossref","first-page":"3239","DOI":"10.1109\/TED.2012.2218110","article-title":"Experimental study of self-heating effects in trigate nanowire MOSFETs considering device geometry","volume":"59","author":"Ota","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2015.02.003_bib33","unstructured":"S. Makovejev, S. Barraud, T. Poiroux, O. Rozeau, J.-P. Raskin, D. Flandre, V. Kilchytska, Impact of self-heating on UTB MOSFET parameters, in: Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits \u2013 EUROSOI, 2014, O14."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269215000397?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269215000397?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,4]],"date-time":"2024-07-04T11:18:03Z","timestamp":1720091883000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269215000397"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":33,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2015,4]]}},"alternative-id":["S0026269215000397"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2015.02.003","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2015,4]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"DC self-heating effects modelling in SOI and bulk FinFETs","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2015.02.003","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2015 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}