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{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,19]],"date-time":"2025-03-19T14:52:10Z","timestamp":1742395930316},"reference-count":21,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2016,1,13]],"date-time":"2016-01-13T00:00:00Z","timestamp":1452643200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Elektrotech. Inftech."],"published-print":{"date-parts":[[2016,2]]},"DOI":"10.1007\/s00502-015-0380-8","type":"journal-article","created":{"date-parts":[[2016,1,13]],"date-time":"2016-01-13T06:23:46Z","timestamp":1452666226000},"page":"39-42","update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Effects of ionizing radiation on integrated circuits"],"prefix":"10.1007","volume":"133","author":[{"given":"Varvara","family":"Bezhenova","sequence":"first","affiliation":[]},{"given":"Alicja Malgorzata","family":"Michalowska-Forsyth","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2016,1,13]]},"reference":[{"issue":"2","key":"380_CR1","doi-asserted-by":"crossref","first-page":"311","DOI":"10.1109\/TDMR.2009.2019963","volume":"9","author":"O. A. Amusan","year":"2009","unstructured":"Amusan, O. A., et al. (2009): Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process. IEEE Trans. Device Mater. Reliab., 9(2), 311\u2013317.","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"380_CR2","doi-asserted-by":"crossref","first-page":"117","DOI":"10.1109\/TNS.1971.4326422","volume":"NS-18","author":"K. G. Aubuchon","year":"1971","unstructured":"Aubuchon, K. G. (1971): Radiation hardening of P-MOS devices by optimization of the thermal SiO2 gate insulator. IEEE Trans. Nucl. Sci., NS-18, 117.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR3","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1016\/S1874-5903(99)80012-3","volume-title":"Instabilities in silicon devices, new insulators, devices and radiation effects","author":"J. L. Autran","year":"1999","unstructured":"Autran, J. L., Balland, B., Barbottin, G. (1999): Charge pumping techniques\u2014their use for diagnosis and interface state studies in MOS transistors. In G. Barbottin, A. Vapaille (Eds.), Instabilities in silicon devices, new insulators, devices and radiation effects (pp. 405\u2013494). Amsterdam: Elsevier."},{"issue":"6","key":"380_CR4","doi-asserted-by":"crossref","first-page":"3103","DOI":"10.1109\/TNS.2006.885952","volume":"53","author":"H. Barnaby","year":"2006","unstructured":"Barnaby, H. (2006): Total-ionizing-dose effects in modern CMOS technologies. IEEE Trans. Nucl. Sci., 53(6), 3103\u20133121.","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"6","key":"380_CR5","doi-asserted-by":"crossref","first-page":"2874","DOI":"10.1109\/23.556880","volume":"43","author":"T. Calin","year":"1996","unstructured":"Calin, T., Nicolaidis, M., Velazco, R. (1996): Upset hardened memory design for submicron CMOS technology. IEEE Trans. Nucl. Sci., 43(6), 2874\u20132878.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR6","first-page":"577","volume-title":"Instabilities in silicon devices, new insulators, devices and radiation effects","author":"W. R. Fahrner","year":"1999","unstructured":"Fahrner, W. R. (1999): An overview of radiation-matter interactions. In G. Barbottin, A. Vapaille (Eds.), Instabilities in silicon devices, new insulators, devices and radiation effects (pp. 577\u2013579). Amsterdam: Elsevier."},{"issue":"3","key":"380_CR7","doi-asserted-by":"crossref","first-page":"779","DOI":"10.1109\/23.510713","volume":"43","author":"D. Fleetwood","year":"1996","unstructured":"Fleetwood, D. (1996): Fast and slow border traps in MOS devices. IEEE Trans. Nucl. Sci., 43(3), 779\u2013786.","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"3","key":"380_CR8","doi-asserted-by":"crossref","first-page":"403","DOI":"10.1016\/0026-2714(95)93068-L","volume":"35","author":"D. Fleetwood","year":"1995","unstructured":"Fleetwood, D., et al. (1995a): Border traps: issues for MOS radiation response and long-term reliability. Microelectron. Reliab., 35(3), 403\u2013428.","journal-title":"Microelectron. Reliab."},{"issue":"6","key":"380_CR9","doi-asserted-by":"crossref","first-page":"1698","DOI":"10.1109\/23.488768","volume":"42","author":"D. Fleetwood","year":"1995","unstructured":"Fleetwood, D., et al. (1995b): Effects of interface traps and border traps on MOS postirradiation annealing response. IEEE Trans. Nucl. Sci., 42(6), 1698\u20131707.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR10","series-title":"Frontiers in electronic testing","volume-title":"Soft errors in modern electronic systems","author":"R. Gaillard","year":"2011","unstructured":"Gaillard, R. (2011): Soft errors in modern electronic systems. Frontiers in electronic testing."},{"key":"380_CR11","doi-asserted-by":"crossref","first-page":"2295","DOI":"10.1109\/TNS.1975.4328122","volume":"NS-22","author":"B. L. Gregory","year":"1975","unstructured":"Gregory, B. L. (1975): Process controls for radiation-hardened aluminum gate bulk silicon CMOS. IEEE Trans. Nucl. Sci., NS-22, 2295.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR12","volume-title":"Handbook of radiation effects","author":"A. Holmes-Siedle","year":"2007","unstructured":"Holmes-Siedle, A., Adams, L. (2007): Handbook of radiation effects. London: Oxford University Press."},{"issue":"3","key":"380_CR13","doi-asserted-by":"crossref","first-page":"500","DOI":"10.1109\/TNS.2003.812928","volume":"50","author":"H. L. Hughes","year":"2003","unstructured":"Hughes, H. L., Benedetto, J. M. (2003): Radiation effects and hardening of MOS technology: devices and circuits. IEEE Trans. Nucl. Sci., 50(3), 500\u2013521.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR14","volume-title":"Radiation detection and measurement","author":"G. F. Knoll","year":"2010","unstructured":"Knoll, G. F. (2010): Radiation detection and measurement. 4th ed. New York: Wiley.","edition":"4"},{"key":"380_CR15","doi-asserted-by":"crossref","first-page":"1627","DOI":"10.1016\/S0306-4549(00)00024-4","volume":"27","author":"J. Kwon","year":"2000","unstructured":"Kwon, J., Motta, A. T. (2000): Gamma displacement cross-sections in various materials. Ann. Nucl. Energy, 27, 1627\u20131642.","journal-title":"Ann. Nucl. Energy"},{"key":"380_CR16","doi-asserted-by":"crossref","first-page":"367","DOI":"10.1142\/S0129156404002417","volume":"14","author":"N. Nowlin","year":"2004","unstructured":"Nowlin, N., Bailey, J., Turfler, B., Alexander, D. (2004): A total-dose hardening-by-design approach for high speed mixed-signal CMOS integrated circuits. Int. J. High Speed Electron. Syst., 14, 367\u2013378.","journal-title":"Int. J. High Speed Electron. Syst."},{"issue":"3","key":"380_CR17","doi-asserted-by":"crossref","first-page":"483","DOI":"10.1109\/TNS.2003.812927","volume":"50","author":"T. R. Oldham","year":"2003","unstructured":"Oldham, T. R., McLean, F. B. (2003): Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci., 50(3), 483\u2013498.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR18","first-page":"901","volume-title":"ISIE\u201903","author":"D. Pan","year":"2003","unstructured":"Pan, D., Li, H., Wilamowski, B. (2003): A radiation-hard phase-locked loop. In ISIE\u201903, pp. 901\u2013906."},{"key":"380_CR19","doi-asserted-by":"crossref","first-page":"271","DOI":"10.1109\/TNS.1972.4326844","volume":"NS-19","author":"J. L. Peel","year":"1972","unstructured":"Peel, J. L., Kinoshita, G. (1972): Radiation-hardened complementary MOS using SiO2 gate insulators. IEEE Trans. Nucl. Sci., NS-19, 271.","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"380_CR20","volume-title":"Semiconductor material and device characterization","author":"D. Schroder","year":"2006","unstructured":"Schroder, D. (2006): Semiconductor material and device characterization. New York: Wiley."},{"key":"380_CR21","doi-asserted-by":"crossref","first-page":"2584","DOI":"10.1109\/23.736501","volume":"45","author":"M. R. Shaneyfelt","year":"1998","unstructured":"Shaneyfelt, M. R., Dodd, P. E., Draper, B. L., Flores, R. S. (1998): Challenges in hardening technologies using shallow-trench isolation. IEEE Trans. Nucl. Sci., 45, 2584.","journal-title":"IEEE Trans. Nucl. Sci."}],"container-title":["e & i Elektrotechnik und Informationstechnik"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-015-0380-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s00502-015-0380-8\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-015-0380-8","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,5,29]],"date-time":"2019-05-29T08:22:00Z","timestamp":1559118120000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s00502-015-0380-8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,1,13]]},"references-count":21,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2016,2]]}},"alternative-id":["380"],"URL":"https:\/\/doi.org\/10.1007\/s00502-015-0380-8","relation":{},"ISSN":["0932-383X","1613-7620"],"issn-type":[{"value":"0932-383X","type":"print"},{"value":"1613-7620","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,1,13]]}}}