乐胖代购免代理版

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,1,22]],"date-time":"2025-01-22T04:40:01Z","timestamp":1737520801633,"version":"3.33.0"},"reference-count":34,"publisher":"Wiley","issue":"7","license":[{"start":{"date-parts":[[2007,11,6]],"date-time":"2007-11-06T00:00:00Z","timestamp":1194307200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Circuit Theory & Apps"],"published-print":{"date-parts":[[2008,10]]},"abstract":"Abstract<\/jats:title>CMOS transistors' noise performance is mainly dominated by flicker (1\/f<\/jats:italic>) noise. BSIM4.X MOSFET simulation model develops two distinct models, SPICE\u2010Flicker and BSIM\u2010Flicker, to calculate flicker noise. In this paper, these two models are analytically examined and compared to noise measurements, using an NMOS and a PMOS device fabricated in 0.6\u00b5m process by Austria Mikro Systeme (AMS). MOSFET 1\/f<\/jats:italic>noise measurements and the respective simulations were obtained under various bias conditions, as to study which flicker noise model is the optimum in each operating region. Measurement temperature was constant at 295\u2009K. Comparisons suggest that in an NMOS transistor operating in the triode or saturation region, BSIM\u2010Flicker model is accurate and therefore preferable. In a PMOS transistor, the most suitable model to describe its 1\/f<\/jats:italic>noise performance in the linear regime is also BSIM\u2010Flicker, whereas SPICE\u2010Flicker is more preferable in saturation. In NMOS transistors, the selected model provides a great accurate description of flicker noise, contrary to PMOS transistors, where simulation models appear to be quite unreliable and need further improvement. Copyright \u00a9 2007 John Wiley & Sons, Ltd.<\/jats:p>","DOI":"10.1002\/cta.461","type":"journal-article","created":{"date-parts":[[2007,11,6]],"date-time":"2007-11-06T16:19:26Z","timestamp":1194365966000},"page":"813-823","source":"Crossref","is-referenced-by-count":9,"title":["Analysis and selection criteria of BSIM4 flicker noise simulation models"],"prefix":"10.1002","volume":"36","author":[{"given":"T.","family":"Noulis","sequence":"first","affiliation":[]},{"given":"S.","family":"Siskos","sequence":"additional","affiliation":[]},{"given":"G.","family":"Sarrabayrouse","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2007,11,6]]},"reference":[{"key":"e_1_2_1_2_2","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1968.6269"},{"key":"e_1_2_1_3_2","first-page":"207","volume-title":"Semiconductor Surface Physics","author":"McWhorter AL","year":"1957"},{"key":"e_1_2_1_4_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(68)90100-7"},{"key":"e_1_2_1_5_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(68)90101-9"},{"key":"e_1_2_1_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1974.17906"},{"key":"e_1_2_1_7_2","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21687"},{"key":"e_1_2_1_8_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(87)90095-5"},{"key":"e_1_2_1_9_2","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(69)90076-0"},{"key":"e_1_2_1_10_2","doi-asserted-by":"publisher","DOI":"10.1016\/0031-8914(72)90226-1"},{"key":"e_1_2_1_11_2","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(78)90249-9"},{"key":"e_1_2_1_12_2","doi-asserted-by":"publisher","DOI":"10.1016\/0378-4363(76)90089-9"},{"key":"e_1_2_1_13_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.329022"},{"key":"e_1_2_1_14_2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(80)90199-9"},{"key":"e_1_2_1_15_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.34242"},{"key":"e_1_2_1_16_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.47770"},{"key":"e_1_2_1_17_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.108195"},{"key":"e_1_2_1_18_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.333808"},{"key":"e_1_2_1_19_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.333809"},{"key":"e_1_2_1_20_2","doi-asserted-by":"publisher","DOI":"10.1109\/16.333812"},{"key":"e_1_2_1_21_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.391"},{"key":"e_1_2_1_22_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.387"},{"key":"e_1_2_1_23_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.351"},{"key":"e_1_2_1_24_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.386"},{"key":"e_1_2_1_25_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.383"},{"key":"e_1_2_1_26_2","doi-asserted-by":"publisher","DOI":"10.1002\/cta.244"},{"key":"e_1_2_1_27_2","doi-asserted-by":"publisher","DOI":"10.1109\/43.892853"},{"key":"e_1_2_1_28_2","doi-asserted-by":"publisher","DOI":"10.1109\/43.924829"},{"key":"e_1_2_1_29_2","doi-asserted-by":"publisher","DOI":"10.1109\/9780470547182"},{"key":"e_1_2_1_30_2","unstructured":"BSIM4.3.0 MOSFET\u2014User's Manual. The Regents of the University of California Berkeley 2003."},{"key":"e_1_2_1_31_2","unstructured":"BSIM3v.2.2 Manual. UC Berkeley Berkeley 1999."},{"volume-title":"Model 5182 Low\u2010noise Current Preamplifier, Instruction Manual","year":"2002","key":"e_1_2_1_32_2"},{"key":"e_1_2_1_33_2","unstructured":"Model Current Sensitive Preamplifier. Available from:www.signalrecovery.com\/5182page.htm(accessed 26 July2006)."},{"key":"e_1_2_1_34_2","doi-asserted-by":"crossref","unstructured":"BigangM DevireddySP ButlerZC ShanwareA GreenK ChambersJJ VisokayMV ColomboL RotondaroAL.Flicker noise in nitrided high\u2010k dielectric NMOS transistors. In Noise in Devices and Circuits III Balandin AA Danneville F Deen MJ Fleetwood DM (eds). Proceedings of the SPIE vol. 5844 2005;31\u201340.","DOI":"10.1117\/12.609632"},{"key":"e_1_2_1_35_2","doi-asserted-by":"crossref","unstructured":"Celik\u2010ButlerZ.Different noise mechanisms in high\u2010k dielectric gate stacks (Invited Paper). In Noise in Devices and Circuits III Balandin AA Danneville F Deen MJ Fleetwood DM (eds). 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