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. 2015 Feb 25;27(8):1333-8.
doi: 10.1002/adma.201403998. Epub 2015 Jan 14.

Direct transfer of magnetic sensor devices to elastomeric supports for stretchable electronics

Michael Melzer  1 , Daniil Karnaushenko, Gungun Lin, Stefan Baunack, Denys Makarov, Oliver G Schmidt
Affiliations

Direct transfer of magnetic sensor devices to elastomeric supports for stretchable electronics

Michael Melzer et al. Adv Mater. .

Abstract

A novel fabrication method for stretchable magnetoresistive sensors is introduced, which allows the transfer of a complex microsensor systems prepared on common rigid donor substrates to prestretched elastomeric membranes in a single step. This direct transfer printing method boosts the fabrication potential of stretchable magnetoelectronics in terms of miniaturization and level of complexity, and provides strain-invariant sensors up to 30% tensile deformation.

Keywords: giant magnetoresistive multilayers; giant magnetoresistive sensors; stretchable electronics; stretchable magnetoelectronics; transfer printing.

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Figures

Figure 1
Figure 1
Process flow of the direct transfer of magnetoelectronic nanomembranes. a,b) Preparation of GMR multilayers with Si capping layer on a PAA‐coated Si wafer (donor). c) Spin coating and curing of a PDMS film (receiver) on an antistick layer‐coated carrier. d) Oxygen plasma activation of donor and prestretched receiver substrate. e,f) Heat and pressure‐assisted adhesion of both activated surfaces. The magnified view in (f) shows a cross section of the bonding interface region. The bonding is established between the top Si surface, which is oxidized to SiOx by the plasma and the activated PDMS (layers not drawn to scale). g) Dissolving of the PAA sacrificial layer to detach the GMR structures from the donor substrate and release of the prestrain in the receiver membrane to obtain a wrinkled morphology. h) The transferred sensors can be elastically stretched in the direction of the prestrain.
Figure 2
Figure 2
Direct transfer of two sensor designs (respective panels are separated by the dashed line): a) A GMR microsensor array of different [Py/Cu]30 multilayer elements on the rigid donor substrate. The magnified views in (b,c) show a microsensor stripe and meander, respectively, with the two‐step photolithography for the sensing element and the electrodes. d) A macroscopic serpentine meander consisting of a [Co/Cu]50 GMR multilayer. e–g) Microsensors transferred to the receiving substrate using a uniaxial prestrain of 20%, as indicated in (f). h) The serpentine meander after transfer to the free‐standing PDMS membrane using a biaxial prestrain of 25% × 25%. i) The transferred microsensor array can conform to the soft and curved surface of a fingertip. j) GMR characteristics of a microsensor element before (black) and after (red) the transfer process. k) SEM images of a FIB cut through the transferred GMR film in (h) showing the good adhesion of the wrinkled magnetic nanomembrane to the PDMS support. l) A confocal microscopy image showing the topology of the wrinkled GMR multilayer element in (h). m) GMR characteristics of the serpentine meander before (black) and after (red) the transfer process.
Figure 3
Figure 3
Stretching of transferred [Co/Cu]50 multilayer meanders. a) GMR curves measured at different strains. The GMR ratio is smaller than the known magnetoresistance for [Co/Cu] multilayers, because the saturation field is beyond the maximum field range (±5 kOe) of the setup. b) GMR magnitude (red dots) and sensor resistance (black squares) with increasing tensile strain. The inset shows the sensor mounted to the stretching stage and contacted for in situ GMR characterization.
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